Allicdata Part #: | SI4453DY-T1-GE3-ND |
Manufacturer Part#: |
SI4453DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 10A 8-SOIC |
More Detail: | P-Channel 12V 10A (Ta) 1.5W (Ta) Surface Mount 8-S... |
DataSheet: | SI4453DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 14A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 5V |
Vgs (Max): | ±8V |
FET Feature: | -- |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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The SI4453DY-T1-GE3 is a chip manufactured by Vishay Siliconix. It is a single N-channel enhancement-mode MOSFET, which is suitable for use in low voltage, low current switching applications. This type of MOSFET is commonly used in the automotive and consumer electronics industries, due to its low voltage, low power requirements and low on-resistance. In addition, the SI4453DY-T1-GE3 offers an excellent performance with an on-resistance of 0.045Ω and a maximum drain-source voltage of 30V.
The working principle of the SI4453DY-T1-GE3 is similar to that of other enhancement-mode MOSFETs. An input signal is applied to the gate of the device, which controls the drain-source current flow between the source and drain. When the gate voltage is low, the MOSFET stays in cut-off mode, blocking all current from flowing between the source and drain. When the gate voltage is high, the MOSFET is turned on, allowing current to flow through the channel between the source and drain. The drain-source current is also proportional to the gate voltage, so the higher the voltage applied to the gate, the higher the drain-source current.
The SI4453DY-T1-GE3 has a variety of applications in automotive, industrial, and consumer electronics. In automotive applications, the device is commonly used in circuit protection systems, since it can protect against potential surges in the circuit. The SI4453DY-T1-GE3 is also used in industrial applications in which a low voltage, low power device is needed, such as motor control circuits and HVAC systems. In consumer electronics, the SI4453DY-T1-GE3 can be used in battery-powered devices to switch on/off various components.
In summary, the SI4453DY-T1-GE3 is a single N-channel enhancement-mode MOSFET which is suitable for low voltage, low power switching applications. It offers an excellent performance with an on-resistance of 0.045Ω and a maximum drain-source voltage of 30V. It is commonly used in automotive, industrial and consumer applications, due to its low on-resistance and low power requirements. It is used to switch on/off components in battery powered devices, and can also be used to protect against potential surges in automotive and industrial circuits.
The specific data is subject to PDF, and the above content is for reference
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