SI4412ADY-T1-GE3

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The SI4412ADY-T1-GE3 is a single-channel N-channel enhanced vertical DMOS FET specially designed to incorporate the increased voltage ratings and superior temperature characteristics that are necessary for use in digital switching, power management, and other automotive applications. The FET offers low ON-resistance, fast switching, inductive peak current capability, and wide voltage ratings with excellent temperature performance to enable automotive electronics designers to achieve high power efficiency and reliability.

The construction of a DMOS FET is completely different from that of a conventional MOSFET. In a traditional MOSFET structure, the device gates are connected to a channel created in the substrate layer, while in a DMOS FET, the channel is surrounded by an extension of the source material up to the gate. This results in a much more efficient charge transfer between the source and drain terminals and leads to improved performance. The extended source-drain separation between the source and drain regions also increases the ON-state current capacity of the device.

The SI4412ADY-T1-GE3 features a high voltage rating of -12 V, a low ON-resistance rating of 0.15 Ohms, and a gate to source rating of -3 V. This combination of characteristics provides a wide operating range and excellent temperature performance that is necessary for use in power management and automotive applications. The FET also provides peak current capability of up to 4A which enables the device to efficiently manage large current spikes. Moreover, the device is capable of operating at temperatures up to +150°C.

In addition, the SI4412ADY-T1-GE3 has a low input gate capacitance and gate-drain charge, making it well suited for applications requiring good linearity and frequency response such as electronic load switches, power switch controllers, and other automotive power management ICs. As a result, the device can easily provide improved efficiency and robustness for modern automotive electronics.

The SI4412ADY-T1-GE3 features an improved logarithmic body diode, which helps reduce conduction losses. This diode is designed to offer forward diode voltage drops as low as .32V and a low forward resistance rating of .01 Ohms. This combination of features makes the SI4412ADY-T1-GE3 well-suited for use in high power, high frequency switching applications.

In summary, the SI4412ADY-T1-GE3 is a high voltage, low ON-resistance, and fast switching N-channel DMOS FET that is well-suited for applications such as digital switching, power management and other automotive applications. The device offers excellent temperature performance, peak current capability, and improved logarithmic body diode, making it ideal for modern automotive designs requiring improved efficiency and robustness.

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