SI7994DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI7994DP-T1-GE3 is a logic level N-channel Enhancement Mode Field Effect Transistor (FET) in a lead-free SOP-8 Low-Profile Fine-Pitch Plastic Package. It has a maxim charging gate voltage of -20 V and a gate voltage of 20 V. This device operates in an operating temperature range of -55 °C to +150 °C and a drain current of -3 A. It also has an Avalanche energy rating of 600 mJ.

SI7994DP-T1-GE3 application includes voltage boost, as well as a variety of other occasions requiring a high-speed switching control circuit. It is widely used in notebook computers, IOT, TV, digital products, automotive electronics, smart home, medical equipment, and industrial control.

The SI7994DP-T1-GE3 array is made up of a variety of transistors that are arranged in rows and columns. Each of the transistors is connected to the gates and drains of one another in an array, creating a single switching device with one source, one drain, and several gates. This allows for multiple control signals to be sent to the array simultaneously, resulting in faster switching.

The working principle of the SI7994DP-T1-GE3 is based on the fact that it can convert a low level input signal (logic low) into a higher level output signal (logic high). The device operates in two states: the On-state, when it is turned on and a positive voltage is applied to the gate, and the Off-state, when it is turned off and no voltage is applied to the gate. When the device is in the On-state, the N-channel transistors within the array begin to conduct, and thus a current can flow through the drain and into the body.

In the Off-state, the gate voltage must be at least the threshold voltage for the device to be “off”. If the gate voltage is not sufficient, the device will remain in the On-state. The FET devices in the arrays then switch to the Off-state by turning off the flow of current. This allows for efficient control of power consumption while providing high switching speeds and a low voltage consumption.

The SI7994DP-T1-GE3 is a versatile transistor that can be used in a variety of applications. It has many advantages such as low voltage consumption, high switching speeds, and efficient current control. It is an ideal choice for applications requiring advanced switch control and high-speed switching.

The specific data is subject to PDF, and the above content is for reference