Allicdata Part #: | SI7922DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7922DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 100V 1.8A 1212-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 1.8A 1.3W Sur... |
DataSheet: | SI7922DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Base Part Number: | SI7922 |
Supplier Device Package: | PowerPAK® 1212-8 Dual |
Package / Case: | PowerPAK® 1212-8 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.3W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 195 mOhm @ 2.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A |
Drain to Source Voltage (Vdss): | 100V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7922DN-T1-GE3 is a three-channel MOSFET array featuring an integrated body diode. This device is designed for use in high side switching applications. It is suitable for several applications such as general-purpose relay driver, motor control applications, automotive relays, electronic thermostats, lighting controls and smart power supplies.
MOSFETs, also known as field effect transistors, are transistors with an insulated gate. They are used as switches when connected to a voltage source and allow for efficient power control as well as low voltage drop. Furthermore, MOSFETs exhibit fast switching capabilities and improved thermal performance.
The SI7922DN-T1-GE3 is an ideal choice for high side switching applications. Its three channels enable it to control larger loads compared to a single-channel MOSFET array. The integrated body diode eliminates the need for an external diode, reducing cost and board space. Additionally, the device features integrated overvoltage protection that safeguards against overvoltage spikes and incorrect lightning and switching voltages.
The SI7922DN-T1-GE3 utilizes a common source architecture. Its upper and lower channels are connected through output and gate terminals, while its middle channel is connected through control and gate terminals. In operation, current flows from source to drain when the voltage applied to the gate terminal is greater than the threshold voltage. By controlling the gate voltage, the device can be used to switch on and off the flow of current through the channel.
The device also features an ESD protection circuit. This circuit uses an n-channel MOSFET connected across the source and gate terminals, which provides protection from electrostatic discharge. Additionally, the device also features an over-current protection circuit, which uses an external resistor connected between the source and drain terminals. This resistor limits the current flowing through the device and helps to protect it from damage due to excessive current.
In conclusion, the SI7922DN-T1-GE3 is a three-channel, high side switching MOSFET array. It features an integrated body diode and integrated overvoltage protection to safeguard the device from incorrect lightning and switching voltages. It also features an ESD protection circuit and an overcurrent protection circuit for added safety. This device is ideal for applications requiring high side switching capabilities, such as motor control applications, automotive relays, electronic thermostats and lighting controls.
The specific data is subject to PDF, and the above content is for reference
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