SI7980DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7980DP-T1-GE3TR-ND

Manufacturer Part#:

SI7980DP-T1-GE3

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 8A PPAK SO-8
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 20V 8A 19.8...
DataSheet: SI7980DP-T1-GE3 datasheetSI7980DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.55000
10 +: $ 0.53350
100 +: $ 0.52250
1000 +: $ 0.51150
10000 +: $ 0.49500
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7980
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.8W, 21.9W
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7980DP-T1-GE3 is a switching mode power supply from the SI7900DP Trench MOSFET Array series from Vishay Intertechnology. This high performance MOSFET array has two N-channel power MOSFETs and diode array, with one high-side MOSFET and one low-side MOSFET. This device provides the designer with an easily-controlled, low-cost, and reliable power supply solution for many kinds of applications.

The SI7980DP-T1-GE3 utilizes matrix architecture to achieve high levels of power retention and thermal stability. The internal power circuitry of this device delivers very high efficiency, with minimal power losses. It is designed to provide controlled and repeatable switching performance under all conditions, allowing the designer to have more control over the power supplied.

This device is ideal for use in high power applications such as industrial, computer and office equipment. It can also be used in automotive, automotive auxiliary, and lighting applications. The SI7980DP-T1-GE3 can be used to power medium and high power supplies up to 600V, having a current capacity up to 8A, and can operate across switching frequencies up to 5kHz.

The working principle of the SI7980DP-T1-GE3 is based on the use of two N-channel MOSFETs and a diode array. The MOSFETs are connected in a switched-mode configuration, with the cathode of the diode array connected to the source of the two MOSFETs, while the anode of the diode array is connected to the top of the power supply. This voltage-clamped circuit allows the output voltage to be controlled accurately and reliably.

When the power supply is turned off, the potential of the transistor base and collector terminals decreases, causing the MOSFETs to switch off. This causes the MOSFET to block the current flowing through the circuit. As a result, the output voltage of the power supply will remain constant, allowing the output voltage to be precisely controlled.

When the power supply is turned on, the potential of the transistor base and collector terminals rise, causing the MOSFETs to switch on. This causes the MOSFET to allow current to flow through the circuit. The current then passes through the power supply output to the load, supplying the voltage required by the application.

The SI7980DP-T1-GE3 is a highly efficient, reliable, and low-cost power supply solution for many kinds of applications. It has been designed to provide controlled and repeatable switching performance under all conditions, allowing the designer to have more control over the power supplied. Its matrix architecture is designed to deliver high levels of power retention and thermal stability, allowing it to be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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