SI7922DN-T1-E3

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The SI7922DN-T1-E3 is a silicon N-channel MOSFET array manufactured by Vishay Intertechnology, Inc. It is the array version of their popular SI7922DN-T1 single MOSFET. It contains two N-Channel enhancement mode MOSFETs in a 4-pin SOT-223 package. This MOSFET array is usually used in power management applications and has great switching/pulsing speed capabilities. This MOSFET array provides great levels of efficiency, low power usage and cost effectiveness.

Features and Benefits

• High-efficiency design
• Low operating and switching losses
• Low input capacitance
• Low reverse transfer capacitance
• Low on-resistance and low threshold voltage
• High power dissipation
• High-speed switching
• Excellent surge and thermal stability
• TTL compatible

Application Field

The SI7922DN-T1-E3 is usually used in power management applications. It is used in several areas of the industry including industrial, automotive and telecommunication industries. It can be used in DC-DC converters, lighting control, audio amplifiers, phase control, and special motor control.

Working Principle

The dual N-channel MOSFETs in the SI7922DN-T1-E3 have enhancement mode as their operational mode which means they are not normally conductive but instead require a signal voltage applied to the gate to make them conductive. This allows the signal voltage to determine the drain-source current. The array includes two separate MOSFETs which can be used either in parallel or in series connection configurations. This allows the signal voltage to switch on and off the MOSFETs connected to the gate, thereby controlling the amount of current that can flow through the MOSFETs.

Conclusion

In conclusion, the SI7922DN-T1-E3 is a dual N-channel MOSFET array manufactured by Vishay Intertechnology, Inc. It is used in several power management applications in the industrial, automotive and telecommunication industries. It includes two N-Channel MOSFETs which can be used either in parallel or in series connection configurations. This allows the signal voltage to switch on and off the MOSFETs connected to the gate, thereby controlling the amount of current that can flow through the MOSFETs. The SI7922DN-T1-E3 provides great levels of efficiency, low power usage and cost effectiveness.

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