| Allicdata Part #: | SI7904BDN-T1-E3TR-ND |
| Manufacturer Part#: |
SI7904BDN-T1-E3 |
| Price: | $ 0.35 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 20V 6A 1212-8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6A 17.8W Surfa... |
| DataSheet: | SI7904BDN-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.35000 |
| 10 +: | $ 0.33950 |
| 100 +: | $ 0.33250 |
| 1000 +: | $ 0.32550 |
| 10000 +: | $ 0.31500 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Base Part Number: | SI7904 |
| Supplier Device Package: | PowerPAK® 1212-8 Dual |
| Package / Case: | PowerPAK® 1212-8 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 17.8W |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7.1A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI7904BDN-T1-E3 is a powerful device which is often used in a variety of applications. It is an N-Channel power MOSFET array, a commonly used type of transistor, and it is used to regulate power through its ability to efficiently switch between two separate conductive states. It is made up of two internally connected N-Channel power MOSFETs, and the array can easily be interfaced with external circuit components to create a powerful and robust power controlling system.
The simplest form of operation for the SI7904BDN-T1-E3 is as a switch. When the gate voltage is 0V, the N-Channel MOSFET is off. When the gate voltage is greater than the threshold voltage, the MOSFET is on. This threshold value is usually 4.5V and typically changes only slightly over time, allowing the power to be controlled very efficiently. This type of operation is common in automotive systems, where the switch controls a device in the car.
The SI7904BDN-T1-E3 is ideal for applications that require efficient power control, such as automotive safety systems, power supplies, and motor control. This type of array also offers other advantages, such as low thermal resistance and low on-resistance over a wide range of temperatures. This low thermal resistance is important for applications where fast switching is necessary, as it allows for better temperature control and therefore improved system reliability. In addition, the dual internal MOSFETs can be used to control peak currents, reducing possible losses and thus improving device efficiency.
The SI7904BDN-T1-E3 is typically supplied in a surface-mount package, which makes it easier to install and reduce assembly time. Its small package size also allows for simple integration into systems, allowing it to be used in compact electronics. Its low power consumption makes it a popular choice for energy-conscious applications and ensures that it has a minimal effect on system energy efficiency.
The SI7904BDN-T1-E3 is a very reliable solution for power control and switching, and is widely used in various applications. The device is easy to install and offers great flexibility and high power control efficiency. As such, it is ideal for applications where reliable and low power usage is critical.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| SI7980DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 8A PPAK ... |
| SI7909DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 5.3A 121... |
| SI7956DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 150V 2.6A PP... |
| SI7946DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 150V 2.1A PP... |
| SI7922DN-T1-E3 | Vishay Silic... | -- | 3000 | MOSFET 2N-CH 100V 1.8A 12... |
| SI7962DP-T1-E3 | Vishay Silic... | 1.51 $ | 1000 | MOSFET 2N-CH 40V 7.1A PPA... |
| SI7960DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 6.2A PPA... |
| SI7942DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 100V 3.8A PP... |
| SI7911DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.2A 121... |
| SI7960DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 6.2A PPA... |
| SI7923DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.3A 121... |
| SI7900AEDN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 6A PPAK ... |
| SI7994DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 60A PPAK... |
| SI7945DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 7A PPAK ... |
| SI7997DP-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET 2P-CH 30V 60A PPAK... |
| SI7983DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 7.7A PPA... |
| SI7904BDN-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET 2N-CH 20V 6A PPAK ... |
| SI7909DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 5.3A 121... |
| SI7946ADP-T1-GE3 | Vishay Silic... | 0.78 $ | 1000 | MOSFET 2 N-CH 150V POWERP... |
| SI7946DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 150V 2.1A PP... |
| SI7900AEDN-T1-E3 | Vishay Silic... | -- | 42000 | MOSFET 2N-CH 20V 6A 1212-... |
| SI7923DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.3A 121... |
| SI7940DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 12V 7.6A PPA... |
| SI7911DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.2A 121... |
| SI7942DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 100V 3.8A PP... |
| SI7956DP-T1-GE3 | Vishay Silic... | -- | 15000 | MOSFET 2N-CH 150V 2.6A PP... |
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| SI7904BDN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 6A 1212-... |
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SI7904BDN-T1-E3 Datasheet/PDF