SMMBD7000LT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Series Connection
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	200mA (DC)
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 100mA
Speed:	Small Signal =
Reverse Recovery Time (trr):	4ns
Current - Reverse Leakage @ Vr:	3µA @ 100V
Operating Temperature - Junction:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBD7000

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The SMMBD7000LT3G is an array of advanced monolithic switches assembled into a small outline four-lead, surface mountable, re-flowable package. This subminiature sized device consists of seven individually controlled and isolated P-Channel power MOSFETs with advanced paralleled process integration. It can perform up to 3A (continuous) at VGS < -2V. The individual switches are designed with low threshold and low gate-source capacitance, making them ideal for low voltage and high speed switching applications.ApplicationsThe SMMBD7000LT3G can be used in many applications, such as in portable computing, consumer electronics, motor control, as well as in automotive and industrial applications. It can be used as a low-to-mid range static switch in a wide variety of applications, including signal line protection, load switching and several current sensor applications. With its low on-resistance and high voltage of 700V, the device is suitable for use in applications where low power is required and the voltage is high.Working PrinciplesThe SMMBD7000LT3G is a monolithic integrated circuit that gives an ideal solution for low power, high voltage and high speed switching. It consists of seven individually controlled and isolated P-Channel MOSFETs. It is designed to reduce the static power dissipation by having each MOSFET connected in parallel to increase its transconductance. The switching characteristics of the device can be matched to the requirements of the application by optimizing the dielectric constant (KT) and the switching time (dT/dV).The device also provides low power consumption and low voltage drop (VdV/dt/s) when switching, as well as fast switching speed (VdV/dt) and low parasitic capacitance. With its low on-resistance and high voltage, it can be used in applications where the voltage is high, and the output should be controlled.In addition, the SMMBD7000LT3G provides a rugged structure and excellent overall thermal performance, with performance not degrading over time. It is also cost effective, enabling high-volume production of complex systems. This device is designed to provide superior performance over a wide operating temperature range.ConclusionThe SMMBD7000LT3G is an ideal device for a variety of applications including signal line protection, load switching and several current sensor applications. It features a low voltage drop and high speed switching, making it suitable for use in applications where low power is required and the voltage is high. It also provides low power consumption and low voltage drop when switching. The rugged structure and excellent thermal performance make this device an ideal choice for a variety of applications.

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