Allicdata Part #: | 497-12533-5-ND |
Manufacturer Part#: |
STB13005-1 |
Price: | $ 0.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 4A I2PAK |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 75W Through ... |
DataSheet: | STB13005-1 Datasheet/PDF |
Quantity: | 1906 |
1 +: | $ 0.68670 |
10 +: | $ 0.61488 |
100 +: | $ 0.47924 |
500 +: | $ 0.39591 |
1000 +: | $ 0.31256 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 4A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 75W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
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Transistors are widely used for electronic switching and amplification. As a type of bipolar junction transistor (BJT), the STB13005-1 is an NPN transistor commonly used in electric circuits. It \has a wide range of applications, from amplifiers to logic circuits.
The STB13005-1 features a breakdown voltage of 30V, a current gain (hFE) of 150, a minimum collector-emitter voltage of 25V and a minimum gross dissipation of 1W. It resembles a typical NPN transistor, with a package of TO-126. Its external components are a collector, an emitter, and a base.
The STB13005-1 has a working principle similar to that of a conventional NPN transistor. The base is connected to a positive voltage source, while the emitter is connected to a negative voltage source. This allows current to flow between the emitter and the base. When this current flows, it is known as base current. The base current is limited by the base-emitter resistance, often referred to as "beta," which is another way of describing the device\'s current gain.
As current flows from the base to the emitter, it creates a drop in the potential between the base and the emitter, allowing a much larger current to flow from the collector to the emitter. This collector current is determined by the beta of the device. The larger the beta, the greater the collector current, and vice versa. This is why the STB13005-1 is often used in amplifiers and logic circuits, because it can handle large collector currents.
In addition to its many uses in amplification and logic circuits, the STB13005-1 is also used in transistor-controlled devices such as motor control circuits, telecommunications equipment, and some types of displays. The STB13005-1\'s breakdown voltage makes it a suitable choice for automotive applications where higher voltages may be present. With its high hFE, it can also be used in circuits that require high amplification.
The STB13005-1 is a versatile device that can be used in a variety of applications. Its versatile design, along with its high hFE and breakdown voltage, make the STB13005-1 a smart choice for a variety of applications. While its main function is in amplification, it can also be used in logic circuits and transistor-controlled devices.
The specific data is subject to PDF, and the above content is for reference
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