STB130NS04ZBT4 Allicdata Electronics
Allicdata Part #:

STB130NS04ZBT4-ND

Manufacturer Part#:

STB130NS04ZBT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 33V 80A D2PAK
More Detail: N-Channel 33V 80A (Tc) 300W (Tc) Surface Mount D2P...
DataSheet: STB130NS04ZBT4 datasheetSTB130NS04ZBT4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): Clamped
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: MESH OVERLAY™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 33V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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STB130NS04ZBT4 is a type of single N-Channel Field Effect Transistor (FET). This device can switch high current with low gate voltage and has low conduction losses. The N-channel MOSFET has low output capacitance and low gate threshold voltage.

The STB130NS04ZBT4 was designed to support USB 3.0 applications. It integrates a high breakdown voltage (BVds) of 200V, a low RDS(on) of 0.95mΩ and low gate threshold voltage Vth of 0.77V for superior power efficiency. The part also features low input capacitance (Ciss) of roughly 48pF and low output capacitance (Coss) of near 9pF. The N-channel MOSFET driver is a pin-compatible replacement with the STB120NS04ZBT5 and the STP140N/G04HBT5 enabling system integrators to economize on stock.

The STB130NS04ZBT4 works like a switch. When +5V voltage is supplied to the Gate and the Source, it turns ON and allows the flow of current between the Drain and the Source. When there is no voltage between Gate and Source, the MOSFET turns OFF and does not allow current flow between the Drain and Source. This is how the STB130NS04ZBT4 works in its on/off states.

STB130NS04ZBT4 has many applications in various industrial, commercial, and residential applications. The STB130NS04ZBT4 is used for logic level a switch in electronic circuits, motor control, and AC/DC converters. It can also be used for high-speed switching in LED and LED strip light installations. Other applications include power control, battery charging, and audio control.

In terms of working principle, the STB130NS04ZBT4 operates by the principle of voltage inversion. Voltage inversion allows the FET to operate at very low power levels, while providing good noise immunity and low circuit power consumption. As the voltage across the Gate and the Source increases, the FET turns ON, allowing current to flow between the Drain and the Source. When the voltage between the Gate and the Source decreases, the FET turns OFF and no current can flow between the Drain and the Source.

The STB130NS04ZBT4 is an affordable, easy to use, and reliable choice for a wide variety of applications. The ability to switch large currents with low gate voltage and the low conduction losses make it an ideal choice for power control. Its low input capacitance and low gate threshold voltage also make it an excellent choice for use in high-speed switching applications. The STB130NS04ZBT4 is a great choice for system integrators looking for a reliable and cost-effective FET solution.

The specific data is subject to PDF, and the above content is for reference

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