STB150NF55T4

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	190nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	6 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STB150NF55T4 is a N-channel field-effect transistor that belongs to ST\'s four hundred and seventy-five collection of STMOS transistors. It is composed of a silicon material and is equipped with a normally-open structure, which is ideal for high-frequency low-voltage applications. This device is commonly used in various amplifier circuits, including power amplifiers, class-A amplifiers, and audio amplifiers. This article covers the application field and working principle of the STB150NF55T4.The STB150NF55T4 is a field-effect transistor that has both an N-channel and a P-channel structure. The N-channel structure has a higher resistance, while the P-channel has a lower resistance. The device is composed of a gate, source, and drain. The gate is the control terminal, while the source and drain are the two ends of the transistor\'s channel, consisting of positively and negatively charged carriers.When the gate voltage is increased to a specific threshold value, the transistor is brought into an enhanced mode and the current begins to flow between the source and drain. The source, drain, and gate terminals are all connected through an oxide layer. The oxide layer provides electrical insulation to the transistor from the environment, eliminating the possibility of electric breakdown.The STB150NF55T4 can be used in various amplifier and power applications. This device is well suited for high-frequency low-voltage applications as its normally-open structure allows for maximum gain at lower voltage operations. This device is capable of handling high-frequency analog signals, making it ideal for high-performance amplifiers and power supplies. This device is also capable of handling current up to 150 amps, making it suitable for high-current applications.In terms of applications, the STB150NF55T4 is suitable for a variety of amplifier types, such as power amplifiers, class-A amplifiers, audio amplifiers, and so on. This device can be used in high-power speaker systems, car audio, and even home audio systems. This device is also capable of driving significant loads, making it suitable for high-power applications.The STB150NF55T4 is a very efficient and reliable transistors that allows for a wide range of applications. This device is easy to use and is perfect for a wide range of applications. This device is also capable of handling high currents which makes it suitable for high-power applications.In summary, the STB150NF55T4 is a high-performance N-channel field-effect transistor that is suitable for a wide range of applications, including amplified audio, power amplifiers, and class-A amplifiers. This device is composed of a gate, source, and drain and is structured with an oxide layer to provide electrical insulation, preventing electric breakdown. The STB150NF55T4 is capable of handling currents up to 150 amps, making it suitable for high-power applications. The device is also well suited for high-frequency low-voltage applications due to its normally-open structure.

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