STB11NM60T4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STB11NM60T4 Application Field and Working Principle

STB11NM60T4 is a state of the art super-junction solution from STMicroelectronics. It is a N-channel MOSFET that provides performance for high current and fast switching applications. With extremely low gate charge, this device is ideal for high frequency switching and switching converters such as AC/DC, DC/DC, and PFC. This device is a superior power semiconductor for power supply applications due to its superior and compact design.

The STB11NM60T4 is a N-channel FET, which stands for Field Effect Transistor. These transistors utilize a gate electrode to control the conductivity of a channel in the device. This gate electrode can be controlled externally by a voltage or current source to change the amount of current flowing through the device. This type of transistor is commonly used as a switching device in power electronics applications.

The STB11NM60T4 is a vertical DMOS, which stands for Double-Diffused Metal Oxide Semiconductor. This device is structurally different from conventional MOSFETs. Instead of a single layer of silicon, the DMOS utilizes two layers which are separated by an oxide layer. The two layers are used to spread the current widely, to achieve better current distribution, and to reduce overall power dissipation. This makes DMOS devices particularly suitable for high-power applications.

The STB11NM60T4 utilizes a combination of both low on-resistance and low gate charge. This is achieved by optimizing the design of the transistor to minimize the charge that must be provided to the gates by the gate driver in order to switch the transistor from ON to OFF and vice versa. This provides a significant advantage in terms of power savings and improved power efficiency.

The STB11NM60T4 is designed for high frequency applications. It is capable of faster and steeper switching, making it ideally suited for higher current applications and/or switching converters. It also has relatively low gate charge, which is beneficial for reducing power losses when switching large amounts of current in high frequency applications.

In terms of its application field, the STB11NM60T4 is suitable for AC/DC, DC/DC, and PFC power supplies, as well as high frequency power electronics applications. It is also suitable for various automotive and industrial applications, such as motor control, battery management, and more. It is also a great choice for portable applications such as laptop and tablet chargers.

In conclusion, the STB11NM60T4 is a superior power switch MOSFET with impressive features such as low gate charge and fast switching. It is suitable for a wide range of high frequency and power switching applications, making it a great choice for many power electronics applications. Its compact design and low on-resistance make it an ideal choice for any power supply design.

The specific data is subject to PDF, and the above content is for reference