STB100NF04T4 Allicdata Electronics

STB100NF04T4 Discrete Semiconductor Products

Allicdata Part #:

497-5951-2-ND

Manufacturer Part#:

STB100NF04T4

Price: $ 1.41
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 40V 120A D2PAK
More Detail: N-Channel 40V 120A (Tc) 300W (Tc) Surface Mount D2...
DataSheet: STB100NF04T4 datasheetSTB100NF04T4 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.27802
Stock 1000Can Ship Immediately
$ 1.41
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: Automotive, AEC-Q101, STripFET™ II
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STB100NF04T4 is a high-speed and high-current N-channel MOSFET which can be used in a wide variety of applications. This type of MOSFET is popular in many different devices, such as power supplies, motor controllers, audio amplifiers, switches, and other power applications. The STB100NF04T4 has a Power Dissipation of 100 W and features a maximum drain-source voltage of 30 V and a drain current of 4 A. It has a low on-resistance of 1.4 Ohms, making it suitable for power applications with low power losses.

The STB100NF04T4’s main application field is power electronics. It is primarily used as a switch in circuits because of its low on-resistance and high current transfer capabilities. It can be used in high-power applications such as power supplies and motor controllers, and can also be used as a rectifier in AC-DC converters. Additionally, the high current rating and low on-resistance make this MOSFET ideal for switching audio signals in amplifiers and AV equipment.

The working principle of the STB100NF04T4 is based on the transistor’s physical structure. The MOSFET is composed of several layers of semiconductor material. The action of the MOSFET is dependent on the electrical field between the source and the drain terminals. When a positive voltage is applied to the gate terminal, an electric field is generated between the source and the drain. This electric field causes the movement of electrons in the semiconductor material, and it results in a current flow from the source to the drain which is controlled by the gate voltage.

The STB100NF04T4 can be used in a variety of applications, and its working principle is based on the structure of the MOSFET. The low on-resistance and high current transfer capabilities make this MOSFET ideal for power applications, audio signal switching, and rectification of AC-DC converters. It is an important component in many different types of circuits, and its functionality and low cost make it one of the most popular MOSFETs on the market.

The specific data is subject to PDF, and the above content is for reference

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