
Allicdata Part #: | 497-6547-2-ND |
Manufacturer Part#: |
STB140NF75T4 |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 75V 120A D2PAK |
More Detail: | N-Channel 75V 120A (Tc) 310W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.23000 |
10 +: | $ 1.19310 |
100 +: | $ 1.16850 |
1000 +: | $ 1.14390 |
10000 +: | $ 1.10700 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 218nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STB140NF75T4 (STB140NF75T4F) is a field-effect transistor (FET) manufactured by ST Microelectronics. It is a surface-mount discrete device designed for power management applications. This insulated-gate bipolar transistors (IGBT) technology combines a high current capability, ruggedness, and flexibility in a small package. STB140NF75T4 FETs are ideal for application in motor and solenoid control, inverters, motor control, heater and lamp control, motor starters, and fan management.
STB140NF75T4 has been designed for operating in an environment where frequent switching of loads and signals is necessary. The FETs are capable of being switched from low to high current, ensuring that the load is effectively controlled. The FETs are versatile and can be used for high-side and low-side as well as for both AC and DC applications. The current ratings of the FETs are available up to 75A.
The STB140NF75T4 FETs have a maximum operating temperature range of -2°C to 150°C. The gate-source voltage (Vgs) and the drain-source voltage (Vds) range from -7V to 17V and 20V to 150V respectively. The on-resistance parameter (RDS on) is available up to 25mΩ, while the total gate charge (Qg) is available between 65nC and 185nC. The device is capable of delivering peak power ratings of up to 1400W.
The main component of the STB140NF75T4 FETs is the insulated gate field-effect transistor (IGFET). An IGFET is a three-terminal device consisting of a electrical gate, source, and drain. It acts as a switch, helping to deliver power from one end to the other. A voltage applied to the gate of the IGFET changes the surface electric potential of the channel, resulting in a change of the channel conductance. By connecting the gate with an external circuit, a voltage dependent control current can be created. With a positive voltage applied to the gate, the channel conductance is increased, and with a negative voltage, it is decreased.
The STB140NF75T4 FETs is suitable for both low and high power applications. For low-side switches, the STB140NF75T4 can be used in digital logic and small low-power signal systems. The device can also be used in power managements systems and industrial motor control, where high current loads are switched with high switching speeds. The STB140NF75T4 is also suitable for high-side switch applications, where greater levels of reliability and power handling are required. The device can be used for smart-charging systems, motor starter applications, and stepper motor drive circuits.
The STB140NF75T4 FETs offer several advantages over classic MOSFETs. The FETs can handle higher drain-source voltages and can sustain higher current levels. Additionally, the FETs can be switched with higher speeds than MOSFETs. With its simple gate-source voltage implementation and excellent electrical characteristics, the STB140NF75T4 FETs can be used in a variety of application scenarios.
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