STB12NM50N Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Field-effect transistors, including STB12NM50N, are active components used in both analog and digital systems that involve amplification and switching. FETs are unique in that they are voltage-controlled, allowing many circuits to be powered directly from DC sources.

The STB12NM50N transistor is a single N-channel enhancement mode monoFET. It is a power MOSFET which offers low on-resistance and fast switching performance. It is designed to be used in high current switching applications and is optimized for avalanche energy spec and ESD protection.

Developed as low to intermediate power switching devices, the STB12NM50N is capable of switching currents up to 12 A, with a typical on-resistance of 0.4 Ω and a total power dissipation of up to 135 W. This makes it suitable for a wide range of applications requiring high current switching performance, including high power DC-DC converters, solid state relays, motor drivers, and AC-DC power supplies.

The STB12NM50N consists of an insulated gate field-effect transistor combined with a low on-resistance vertical power MOSFET in a standard lead plastic package. The device has a reverse voltage of 100 V and a forward voltage of 30 V. It is also able to withstand repeated high-energy transients associated with surge current, ESD strikes, and inductive kickback.

The working principle of the STB12NM50N is based on the classical gate-controllable transistor, utilizing a MOS technology gate structure. An electric field appears between the gate and the channel when a voltage is applied between the gate and source terminals. Depending on the polarity of the gate-to-source voltage, the electric field either increases or decreases the conductivity of the channel. When a sufficient gate voltage is applied, this results in a steep increase in current flow through the channel, resulting in a low on-state resistance.

The main difference between standard transistors and FETs is that the latter are voltage-controlled devices. This means that the output of the FET is controlled by varying the voltage between the gate and source terminals, rather than directly controlling the current flowing through the transistor. This makes the FET much more efficient, as the voltage can be accurately regulated, resulting in a much lower on-state resistance and more efficient power transfer.

The STB12NM50N is a versatile device, suitable for a variety of applications requiring high current switching performance. Its low on-resistance, combined with fast switching performance, makes it ideal for DC-DC converters, solid state relays, and motor drivers, as well as AC-DC power supplies.

The specific data is subject to PDF, and the above content is for reference