STB15NK50ZT4

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STB15NK50ZT4 Application Field and Working Principle

Power metal-oxide-semiconductor field-effect transistors (MOSFETs) are versatile semiconductor devices that are widely used in all types of applications. The STB15NK50ZT4 is one such device. This power MOSFET is part of STMicroelectronics’ STripFET F5 series, and its versatile design allows it to be used in various applications.

The STB15NK50ZT4 is a planar N-channel enhanced ultra-low-voltage MOSFET with a single gate. The device is composed of two JFET sections in series, which provide remarkable performance and low gate charge. It features an epitaxial construction isolated from the substrate by a heavily doped drain. The drain and source are isolated by a heavily doped substrate, which increases dielectric strength and voltage-controlled breakdown. The substrate is a heavily doped N-type layer, while the gate and drain are P-type. This device is suitable for applications that require extremely low drain-source on-state resistance and low gate charge.

The STB15NK50ZT4 is designed for high-frequency, low-voltage applications. It has an on-state resistance of 15mOhm and is rated for drain-source voltage of 500V. It is also rated for a continuous drain current of 40A, a pulsed drain current of 100A, and a maximum junction temperature of 150°C. This device is suitable for use in motor control, solar power inverters, server supplies, and other applications where low gate charge and low on-state resistance are important.

The STB15NK50ZT4 features a number of operating characteristics, including typical threshold voltage of 2.6V, typical VGS(th) of 2V, typical gate charge of 14.1nC, and maximum drain-source on-state resistance of 15mOhm. The device is available in TO-220, TO-220F, and datasheet packages.

The STB15NK50ZT4 is the ideal device for applications where low gate charge and low on-state resistance are essential. It features an enhanced ultra-low-voltage design and is suitable for operation at frequencies up to 500MHz. Furthermore, it offers excellent drain-source breakdown voltage, as well as gate-source breakdown voltage.

The working principle of the STB15NK50ZT4 is based on its JFET characteristics. It is composed of two JFET sections in series, with the gate and source pins isolated by a heavily doped drain. The gate voltage applied to the device affects the resistance between the source and drain pins. When the voltage applied to the gate is negative, it creates a depletion zone around it and the resistance between the source and drain increases, resulting in an “off” state. Conversely, when the voltage applied to the gate is positive, it creates an enhancement zone around it and the resistance between the source and drain decreases, resulting in an “on” state.

The STB15NK50ZT4 is a versatile power MOSFET designed for applications where low gate charge and low on-state resistance are of utmost importance. It is suitable for use in various applications, such as motor control, solar power inverters, server supplies, and other applications. The device features a number of operating characteristics, including threshold voltage, gate charge, and drain-source on-state resistance. Furthermore, its working principle is based on its JFET characteristics.

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