Allicdata Part #: | 497-7938-2-ND |
Manufacturer Part#: |
STB16NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 15A D2PAK |
More Detail: | N-Channel 500V 15A (Tc) 125W (Tc) Surface Mount D2... |
DataSheet: | STB16NM50N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STB16NM50N is a type of single MOSFETs that can be used in a wide range of applications. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are two-terminal devices that are commonly used in electronic circuits for switching, amplifying and controlling electrical signals. They are especially useful for switching high-voltage signals, since they offer efficient control over the flow of current. The STB16NM50N is a high power MOSFET that is fabricated using STMicroelectronics\' proprietary STripFET technology, which offers superior thermal performance, higher switching speed and lower gate charge. This makes it suitable for both commercial and industrial applications.
The STB16NM50N is a N-channel MOSFET which means it is made up of two regions, a source and a drain. The source provides electrons and the drain absorbs them. The STB16NM50N is also an enhancement type MOSFET, which means it can be used to turn a load "on" or "off" - when the gate voltage is applied, it allows current to flow and when it is removed, it prevents current from flowing. This type of control is particularly useful for controlling high-voltage systems since the current can be easily adjusted by the gate voltage.
The STB16NM50N is typically used in switching applications because it can handle high voltages and currents and can switch quickly. It is suitable for a wide range of applications, from high speed switching, to battery charging and motor control, to power management and power conversion. The device has also been used in inverter and converter circuits, as well as in automotive and telecommunications applications. The ease of control and high power handling capability make it a popular choice for many applications.
In terms of working principle, the STB16NM50N operates by allowing electron flow between the source and the drain when a positive voltage is applied to the gate. This creates an electric field which thermally forms an n-channel between the source and the drain, allowing electrons to flow. This electron flow results in current flow through the load which is connected in between the source and the drain. The amount of current that can flow is controlled by the voltage applied to the gate.
Overall, the STB16NM50N is a type of single MOSFETs that is well suited for a wide range of applications ranging from high speed switching to motor control. It is a N-channel MOSFET with an enhancement type that can be turned "on" or "off" by applying a gate voltage. The device operates by allowing electron flow between the source and the drain when a positive voltage is applied to the gate, resulting in current flow through the load.
The specific data is subject to PDF, and the above content is for reference
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