STB11NM60FDT4 Allicdata Electronics
Allicdata Part #:

497-3511-2-ND

Manufacturer Part#:

STB11NM60FDT4

Price: $ 2.19
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A D2PAK
More Detail: N-Channel 600V 11A (Tc) 160W (Tc) Surface Mount D2...
DataSheet: STB11NM60FDT4 datasheetSTB11NM60FDT4 Datasheet/PDF
Quantity: 1000
1 +: $ 2.19000
10 +: $ 2.12430
100 +: $ 2.08050
1000 +: $ 2.03670
10000 +: $ 1.97100
Stock 1000Can Ship Immediately
$ 2.19
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: FDmesh™
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The STB11NM60FDT4 is a n-channel FET device designed as a switching component in circuits where high speed and efficiency is required. This device is primarily used in high-end computing, data center, server and telecommunication applications. The device works by allowing a very small electric current, called the gate current, to open or close a gate on the FET which determines whether an electric current, called the drain current can flow through the device or not.

The device is constructed using a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) which works by utilizing the properties of electrons and electrostatic attraction. When the gate of the FET is open, the electron field flows from source to drain carrying the electric current. However, when the gate is closed, the electron flow is blocked, preventing any current from flowing through the device.

The STB11NM60FDT4 offers excellent performance thanks to its high switching speed, low on-resistance, and low gate charge. It is also well suited to a number of applications due to its excellent thermal characteristics, allowing it to operate reliably in harsh conditions. This FET device also offers very low power consumption and a low cost of ownership.

This device is well suited to applications such as high speed switching, power efficiency, low power consumption, and high reliability. Its high performance and low cost makes it an ideal choice for applications such as high-speed interconnect switches, high-speed data converters, high-speed power supplies, and high-speed consumer electronics. It is also commonly used in motor control and switching power supplies.

The STB11NM60FDT4 is a highly efficient, reliable, and cost-effective device which is perfectly suited to applications where speed and power efficiency are priority. Its excellent thermal characteristics make it an ideal choice for applications where high temperatures and vibrations are a regular occurrence. It can also provide high reliability and performance in harsh environments where extreme temperatures or high levels of vibration are present.

The specific data is subject to PDF, and the above content is for reference

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