
Allicdata Part #: | 497-3511-2-ND |
Manufacturer Part#: |
STB11NM60FDT4 |
Price: | $ 2.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 11A D2PAK |
More Detail: | N-Channel 600V 11A (Tc) 160W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.19000 |
10 +: | $ 2.12430 |
100 +: | $ 2.08050 |
1000 +: | $ 2.03670 |
10000 +: | $ 1.97100 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | FDmesh™ |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STB11NM60FDT4 is a n-channel FET device designed as a switching component in circuits where high speed and efficiency is required. This device is primarily used in high-end computing, data center, server and telecommunication applications. The device works by allowing a very small electric current, called the gate current, to open or close a gate on the FET which determines whether an electric current, called the drain current can flow through the device or not.
The device is constructed using a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) which works by utilizing the properties of electrons and electrostatic attraction. When the gate of the FET is open, the electron field flows from source to drain carrying the electric current. However, when the gate is closed, the electron flow is blocked, preventing any current from flowing through the device.
The STB11NM60FDT4 offers excellent performance thanks to its high switching speed, low on-resistance, and low gate charge. It is also well suited to a number of applications due to its excellent thermal characteristics, allowing it to operate reliably in harsh conditions. This FET device also offers very low power consumption and a low cost of ownership.
This device is well suited to applications such as high speed switching, power efficiency, low power consumption, and high reliability. Its high performance and low cost makes it an ideal choice for applications such as high-speed interconnect switches, high-speed data converters, high-speed power supplies, and high-speed consumer electronics. It is also commonly used in motor control and switching power supplies.
The STB11NM60FDT4 is a highly efficient, reliable, and cost-effective device which is perfectly suited to applications where speed and power efficiency are priority. Its excellent thermal characteristics make it an ideal choice for applications where high temperatures and vibrations are a regular occurrence. It can also provide high reliability and performance in harsh environments where extreme temperatures or high levels of vibration are present.
The specific data is subject to PDF, and the above content is for reference
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