Allicdata Part #: | STB10NK60Z-1-ND |
Manufacturer Part#: |
STB10NK60Z-1 |
Price: | $ 1.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A I2PAK |
More Detail: | N-Channel 600V 10A (Tc) 115W (Tc) Through Hole I2P... |
DataSheet: | STB10NK60Z-1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.99275 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 115W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The STB10NK60Z-1 is a product of STMicroelectronics, and is part of their Extremely high dV/dt rated series. It is a N-type metal-oxide-semiconductor field-effect transistor (MOSFET), which means it is an amplifying device used to switch current on and off in a circuit, using a low power signal at the gate. It is a single transistor, which means it has a single channel passing through it.
The device has a broad range of applications in many different industries. It is commonly used in industrial power-electronics control systems, automotive electronic applications and home appliances. It can also be used in power inverters, motor control applications, battery charging systems, UPS systems and solar inverters.
The STB10NK60Z-1 is designed to withstand hostile environments, and it features a very high dielectric withstanding voltage, making it ideal for applications requiring high insulation in the circuit. It is also designed with anti-corrosion coatings for better protection against humidity and moisture in the air. The device also supports temperatures up to 175°C, making it suitable for harsh environments.
In terms of its working principle, the STB10NK60Z-1 is a voltage-controlled device. It uses an input voltage applied to the gate to control the current flow in the channel. The current is then amplified as it passes through the channel, which is determined by the device’s maximum drain-source voltage and the resistance of the channel. As the gate voltage increases, the current will increase, while as the gate voltage decreases, the current will decrease.
The STB10NK60Z-1 offers the following advantages: high efficiency, minimal switching losses, fast switching speeds and low leakage current. Furthermore, its extreme dV/dt rating means it can handle high voltages and high switching speeds without damaging the device. It also features high thermal stability, making it suitable for applications with high thermal loads.
To summarise, the STB10NK60Z-1 is a high performance single N-type MOSFET, designed to withstand harsh environments and featuring high efficiency and fast switching speeds. It is commonly used in industrial power-electronics control systems, automotive electronic applications and home appliances, as well as power inverters, motor control applications, battery charging systems, UPS systems and solar inverters. It operates by using an input voltage applied to the gate to control the current flow in the channel.
The specific data is subject to PDF, and the above content is for reference
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