STB15N80K5

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The STB15N80K5 is a vertical power MOSFET designed for optimal performance in high current, low voltage switching applications. It utilizes a low on-resistance PowerMOSFET technology, making it well suited for a variety of applications such as motor controls, power converters, power switches, phase control circuits and lighting applications.

Introduction

The STB15N80K5 is an excellent choice to replace high power bipolar transistors and FETs in high current, low voltage applications. It is contain in an easy-to-mount TO-220 package and offers low on-resistance, low gate charge, and low gate-source capacitance. It features a low on-resistance output stage, high efficiency and fast switching capabilities. All these features make it ideal for high current regime, low voltage switching applications in the automotive, industrial, telecommunications and consumer electronic equipment.

Application Fields

The STB15N80K5 is well suited for a variety of electrical, automotive and consumer electronic applications due to its performance characteristics. These include motor control, power converters, power switches, phase control circuits and lighting.

In motor control applications, the device provides low gate charge for faster switching times and improved efficiency. This makes the device ideal for applications such as variable speed drives, battery controlled electric motors, HVAC systems and electric power steering.

The STB15N80K5 is also well suited for power converter applications. Its low gate charge and low on-resistance enable high efficiency and minimal losses in such applications. The device is also well suited for use in high voltage switching applications as it features a low gate-source capacitance ideal for applications where high voltage and low frequency switching is a requirement.

The device is also well suited for lighting applications, particularly LED based systems. The device offers low on-resistance, fast switching times and high efficiency which are essential requirements for this application. The device is also suitable for use in low frequency, high voltage switching applications such as street lighting systems.

Working Principle

The STB15N80K5 is a vertical MOSFET, which means that its gate, source and drain are all connected together vertically. The operation of the device is based on the principle of the transverse electric field effect. When a voltage is applied to the gate, it creates an electric field between the source and the drain, which results in a current flow between them. This current is controlled by controlling the electric field, ie. by changing the voltage applied to the gate.

The STB15N80K5 utilizes a low on-resistance power MOSFET technology which enables it to achieve a low RDS(on) ofmax which minimizes the power loss during switching operations. The device also features a low gate-source capacitance which enables it to operate efficiently even in low frequency, high voltage switching applications. The device also offers a low gate charge enabling it to achieve fast switching times.

Conclusion

The STB15N80K5 is a vertical power MOSFET designed for optimal performance in high current, low voltage switching applications. It utilizes a low on-resistance PowerMOSFET technology, making it well suited for a variety of applications such as motor control, power converters, power switches, phase control circuits and lighting. With its low RDS(on), low gate charge and low gate-source capacitance, the device is an excellent choice to replace high power bipolar transistors and FETs in high current, low voltage applications.

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