Allicdata Part #: | 497-15805-5-ND |
Manufacturer Part#: |
STB100NF03L-03-1 |
Price: | $ 3.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 100A I2PAK |
More Detail: | N-Channel 30V 100A (Tc) 300W (Tc) Through Hole I2P... |
DataSheet: | STB100NF03L-03-1 Datasheet/PDF |
Quantity: | 163 |
1 +: | $ 2.77200 |
10 +: | $ 2.47212 |
100 +: | $ 2.02734 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6200pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STB100NF03L-03-1 is a type of single power MOSFET, a class of transistor which is used predominately for the purpose of switching high-voltage and/or high-current loads. As an example, many automotive starter systems use this type of MOSFET for their main switching function.
At its core, the STB100NF03L-03-1 is a metal-oxide-semiconductor field-effect transistor (MOSFET). As the name implies, it is a combination of a metal, an oxide and a semiconductor, which form a device capable of controlling the transfer of electrical current.
The main purpose of MOSFETS such as the STB100NF03L-03-1 is to control current flow. This is achieved by creating a voltage-controlled “gate”; the voltage applied to the gate determines the voltage drop across the device’s “channel” and thus, the electrical current passing through. By controlling the gate voltage, the current can be precisely controlled. Other functions of a typical MOSFET include voltage regulation, power supply protection, and switching.
In terms of applications, MOSFETS such as the STB100NF03L-03-1 are typically used for high-current and/or high-voltage applications. Such applications may include motor control, motor drivers, power supplies, switching applications, and power management.
When it comes to the working principle of the STB100NF03L-03-1, it is relatively simple. The device itself is an N-channel enhancement type MOSFET, meaning that its channel will be off at zero volts when no gate voltage is applied. When a positive voltage is applied to the gate the channel between source and drain is turned on, allowing current to flow.
The way the MOSFET works is quite simple: voltage is applied to the gate, creating an electrostatic field that attracts electrons to the gate region. This reduces the effective resistance between the source and drain, creating a conducting channel through which current can flow. The amount of current that can pass through the channel is proportional to the amount of voltage applied to the gate.
One advantage of this type of MOSFET is that it can be used for high-voltage and/or high-current applications with minimal power loss. The power losses in the device are very small, meaning that it can operate efficiently in many applications. The STB100NF03L-03-1 also has a high-frequency response due to its low capacitance and gate resistance.
In summary, the STB100NF03L-03-1 is a single power MOSFET which is primarily used for high-voltage and/or high-current applications. It is an N-channel enhancement-type MOSFET, which means that it has a gate voltage-controlled channel. Its power losses are very low, making it efficient in its applications. The STB100NF03L-03-1 also has a high-frequency response due to its low capacitance and gate resistance.
The specific data is subject to PDF, and the above content is for reference
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