STB10N65K3 Allicdata Electronics
Allicdata Part #:

497-14032-2-ND

Manufacturer Part#:

STB10N65K3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 10A D2PAK
More Detail: N-Channel 650V 10A (Tc) 150W (Tc) Surface Mount D2...
DataSheet: STB10N65K3 datasheetSTB10N65K3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STB10N65K3 MOSFET is a very popular and widely used transistor which is being utilized in multiple applications across the world. It is a N-channel power MOSFET which is manufactured using advanced MOSFET process technology. This transistor is capable of handling a wide voltage range, up to 650 V and can easily handle current ratings in excess of 10 A. It has very low on-state resistance and is used for applications such as plug-in power supplies, AC-DC switching power supplies, and in high current switching applications. The STB10N65K3 is also a popular choice for power rectification and power factor correction applications.

The STB10N65K3 transistor is designed with a JFET-like structure which utilizes a multi-gate MOSFET design that provides very low on resistance ratings. The multi-gate structure also allows for improved temperature operation and increased robustness. For this reason, the STB10N65K3 is capable of handling voltages up to 650 V and can be used in applications with high current ratings.

The working principle of the STB10N65K3 is relatively simple. It is a voltage-controlled device that is designed to work by turning current on and off through the device\'s multi-gate structure. The device is activated by applying a voltage to its gate, which causes the N-channel of the MOSFET to turn on allowing current to flow through the device. As the applied voltage increases, the N-channel is able to conduct more current until it reaches its maximum current rating. The STB10N65K3 is also able to store energy in its capacitor, allowing it to quickly react to any sudden changes in voltage or current. This makes it ideal for high-speed switching applications.

The STB10N65K3 is used in a wide variety of applications which include motor control, power supplies, AC-DC switching power supplies, and other high-speed switching applications. It is capable of operating in temperature ranges from -55°C to +175°C and has a maximum voltage rating of 650V. This makes it a suitable choice for many industrial, automotive, and medical applications.

Overall, the STB10N65K3 is a very versatile and widely used transistor. Its multi-gate structure provides low on resistance and its wide range of operating temperatures make it an ideal choice for many applications. Its ability to control current and store energy makes it suitable for a variety of applications in both industrial and automotive markets.

The specific data is subject to PDF, and the above content is for reference

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