| Allicdata Part #: | 497-7001-2-ND |
| Manufacturer Part#: |
STB19NM65N |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 15.5A D2PAK |
| More Detail: | N-Channel 650V 15.5A (Tc) 150W (Tc) Surface Mount ... |
| DataSheet: | STB19NM65N Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 7.75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15.5A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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STB19NM65N is a logic level N-channel enhancement mode field effect transistor (FET) manufactured using advanced planar technology. It belongs to the single category of FETs, MOSFETs. The device has been designed to withstand high current and power levels while providing new levels of power flexibility, improved power efficiency, and high performance. It has a lower on-resistor and is suitable for a wide range of applications.
This FET is specifically designed for use in constrained applications such as high frequency switching, high current load switching and high voltage DC-DC converters. It operates on a wide voltage range from 6V to 65V and provides a high continuous drain current of 19A. It features small chip area, a wide RDS(on) range and a superior gate charge. It also has a high effective internal thermal resistance.
The STB19NM65N FET works in three distinct modes: linear, saturation, and cut-off. In the linear mode, the behavior of the FET is simply determined by the linear relationship between drain current and drain-gate voltage. In the saturation mode, the drain-gate voltage is increased until a point whereby the current does not increase further, meaning the FET has effectively reached saturation. Finally, the cut-off mode occurs when the drain-gate voltage is reduced, causing the drain current to cease. This effectively turns the FET off.
The STB19NM65N FET is suitable for a wide range of applications and can be used for power management in consumer electronics, electric motors and other DC applications. It can be used in amplifier circuits, high frequency switches and motor driver circuits. It can also be used as a switching device in high frequency amplifier applications and in AC-DC converters.
In conclusion, the STB19NM65N FET is suitable for use in high current and power levels due to its low on-resistance, small chip area and wide RDS(on) range. It also offers excellent switching performance, high power efficiency and superior gate charge. Its suitable applications include power management in consumer electronics, electric motors, amplifier circuit, high frequency switches, motor driver circuits, amplifier applications and AC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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STB19NM65N Datasheet/PDF