Allicdata Part #: | STB160NF3LLT4-ND |
Manufacturer Part#: |
STB160NF3LLT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 160A D2PAK |
More Detail: | N-Channel 30V 160A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | STB160NF3LLT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | STripFET™ III |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STB160NF3LLT4 is a type of single field effect transistor, also known as a MOSFET. It is designed for operations at high and low breakdown voltages and for use in heat sinking and switching electronic circuits. This MOSFET is able to operate in temperatures from 0 to 125 degrees Celsius.
The STB160NF3LLT4 has low on-state resistance (Rds(on)) which is a reflection of its high current capacity. This makes it suitable for use in applications ranging from home appliances to electronic devices. In addition, it provides high immunity from electrostatic discharge (ESD) that occurs in outdoor applications or electrical shock.
The main application field of this FET are control high power switching and amplify signals. It is useful when operating with low-noise and requiring high efficiency supply circuits. STB160NF3LLT4 is a common choice for high-frequency switching and signal transmission. Its small size and wide frequency band also makes it suitable for these applications.
The working principle of STB160NF3LLT4 lies in its ability to regulate the flow of current. It works by applying a voltage to the gate of the transistor, which allows current to pass through the source and drain terminals. The voltage applied to the gate will determine the resistance of the channel between the source and drain. This resistance, in turn, determines the amount of current flowing through the transistor.
The STB160NF3LLT4 can be used for various purposes such as amplifying high frequency signals, voltage shifters, and high power switching. The FET has a low input capacitance and fast switching speed which makes it ideal for radio frequency applications. It can also be used in pulse width modulation (PWM) and other power control circuits to regulate the current flow in a circuit.
In conclusion, STB160NF3LLT4 is a single field effect transistor that is designed for operations at high and low breakdown voltages. It has low on-state resistance (Rds(on)) which makes it suitable for use in home appliances and other electronic devices. It is useful for high power switching, amplifying high frequency signals, and voltage shifters. The working principle of STB160NF3LLT4 is to regulate the flow of current by applying voltage to the gate of the transistor.
The specific data is subject to PDF, and the above content is for reference
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