| Allicdata Part #: | STB13NM50N-1-ND |
| Manufacturer Part#: |
STB13NM50N-1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 12A I2PAK |
| More Detail: | N-Channel 500V 12A (Tc) 100W (Tc) Through Hole I2P... |
| DataSheet: |  STB13NM50N-1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STB13NM50N-1 is a frequently utilized FET (field-effect transistor). It is part of the STB series created by STMicroelectronics and is part of their STripFET N-channel Power MOSFETs Lines. An FET is a type of transistor which uses an electric field to control the flow of electricity. It is classified as a unipolar device, meaning it only uses one kind of charge carrier to allow for scalability. The STB13NM50N-1 can be used in various low- and medium-power applications, such as switching and amplifying. It is also used in a wide range of industries such as automotive, consumer electronics, and communication.
The STB13NM50N-1 is a N-type MOSFET (metal-oxide-semiconductor field-effect transistor). It is an insulated gate FET (IGFET) with highly developed features. Its features make it useful in fast switching, low-frequency applications. It is constructed on an N-type substrate with an N-type source and drain regions that have a cross section of penetration.
Specifically, the STB13NM50N-1 is constructed
The specific data is subject to PDF, and the above content is for reference
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