Allicdata Part #: | 497-13089-2-ND |
Manufacturer Part#: |
STD3NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 3.3A DPAK |
More Detail: | N-Channel 600V 3.3A (Tc) 50W (Tc) Surface Mount DP... |
DataSheet: | STD3NM60N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 188pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 1.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD3NM60N is a part of a family of N-channel, enhancement mode MOSFETs. It is a voltage controlled device, which indicates that its conductivity is determined by the voltage applied to its gate terminal. It is a single transistor device which differs from dual-device FETs. The STD3NM60N is a very robust device with a rated drain current of 60A and a drain-source voltage of 60V.
The STD3NM60N has a wide variety of applications in an array of industries, ranging from automotive electronics to industrial control. It is mainly used to amplify and switch low-signal electrical currents and is also used to control motor movement, power supplies, and provide high-speed switching in digital logic applications. As a single transistor-based device, it is primarily used in digital integrated circuits where it is used as a high-speed switch to turn conducting circuits on and off for digital signal processing.
The basic working principle of the STD3NM60N is simple. When a voltage is applied to the gate terminal, electrons are attracted to the gate area and accumulate on the gate region of the device. This attracts positive ions to the drain-source region, forming a conductive path and allowing electrons to flow between the drain-source region. The flow of electrons is thus controlled by the voltage applied to the gate terminal. The electric field created between the gate and drain-source regions exerts a force on the electrons, and this force opens or closes the MOSFET\'s conductive channel. This allows the device to act as a switch or an amplifier, depending on which state the MOSFET is in and the voltage applied to the gate terminal.
One of the main advantages of the STD3NM60N is its high speed switching capability. The device can switch up to 60 volts and 60 amps at frequencies as high as 200KHz, making it one of the fastest transistors available. It also features a low on-resistance of less than 10 ohms, which further adds to its speed and efficiency. Additionally, its low capacitance and low power consumption make it an ideal choice for digital logic applications, as well as motor and power control applications. Finally, its low cost and ease of use make it a popular choice for many electronic applications.
The STD3NM60N is an excellent choice for a multitude of applications due to its range of useful features. Its low cost, high speed, and efficiency make it a desirable device for many applications. While it is primarily used in digital circuitry, it also has a variety of applications in other industrial sectors. Its wide range of features and capabilities make it a great choice for any application.
The STD3NM60N is a single transistor device that is used in a wide range of applications, from automotive electronics to industrial control. Its main advantages are its fast switching speed, low on-resistance, low capacitance, and low power consumption. It is an excellent choice for digital logic, Motor and Power Control applications due to these features. Its versatility and ease of use make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STD30NE06L | STMicroelect... | -- | 1000 | MOSFET N-CH 60V 30A DPAKN... |
STD30NE06LT4 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A DPAKN... |
STD3NM50T4 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 550V 3A DPAKN... |
STD30NF06 | STMicroelect... | -- | 1000 | MOSFET N-CH 60V 28A DPAKN... |
STD38NH02L-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 24V 38A IPAKN... |
STD36NH02L | STMicroelect... | -- | 1000 | MOSFET N-CH 24V 30A DPAKN... |
STD3NM60-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 600V 3A IPAKN... |
STD30PF03L-1 | STMicroelect... | -- | 1000 | MOSFET P-CH 30V 24A IPAKP... |
STD3NK60ZD | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 600V 2.4A DPA... |
STD35N3LH5 | STMicroelect... | -- | 1000 | MOSFET N-CH 30V 35A DPAKN... |
STD3PK50Z | STMicroelect... | -- | 1000 | MOSFET P-CH 500V 2.8A DPA... |
STD30NF06T4 | STMicroelect... | 0.48 $ | 1000 | MOSFET N-CH 60V 28A DPAKN... |
STD3NK50Z-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 2.3A IPA... |
STD30NF06LAG | STMicroelect... | 0.26 $ | 1000 | MOSFETN-Channel 60V 28A ... |
STD3NK60Z-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 600V 2.4A IPA... |
STD3N65M6 | STMicroelect... | 0.32 $ | 1000 | MOSFET N-CH 650V DPAK |
STD3NK60ZT4 | STMicroelect... | 0.35 $ | 1000 | MOSFET N-CH 600V 2.4A DPA... |
STD3N40K3 | STMicroelect... | 0.39 $ | 1000 | MOSFET N CH 400V 2A DPAKN... |
STD3LN62K3 | STMicroelect... | 0.42 $ | 1000 | MOSFET N-CH 620V 2.5A DPA... |
STD35P6LLF6 | STMicroelect... | -- | 1000 | MOSFET P-CH 60V 35A DPAKP... |
STD3NK80ZT4 | STMicroelect... | 0.48 $ | 2500 | MOSFET N-CH 800V 2.5A DPA... |
STD30NF06LT4 | STMicroelect... | 0.53 $ | 1000 | MOSFET N-CH 60V 35A DPAKN... |
STD35NF06T4 | STMicroelect... | -- | 1000 | MOSFET N-CH 60V 35A DPAKN... |
STD30N10F7 | STMicroelect... | 0.53 $ | 1000 | MOSFET N-CH 100V 30A DPAK... |
STD37P3H6AG | STMicroelect... | 0.55 $ | 1000 | MOSFET P-CH 30V 40A DPAKP... |
STD3N62K3 | STMicroelect... | -- | 1000 | MOSFET N-CH 620V 2.7A DPA... |
STD35NF06LT4 | STMicroelect... | 0.5 $ | 1000 | MOSFET N-CH 60V 35A DPAKN... |
STD3N80K5 | STMicroelect... | -- | 1000 | MOSFET N-CH 800V 2.5A DPA... |
STD3NK90ZT4 | STMicroelect... | 0.55 $ | 1000 | MOSFET N-CH 900V 3A DPAKN... |
STD30NF03LT4 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A DPAKN... |
STD35NF3LLT4 | STMicroelect... | -- | 5000 | MOSFET N-CH 30V 35A DPAKN... |
STD30N6LF6AG | STMicroelect... | -- | 2500 | MOSFET N-CH 60V 24AN-Chan... |
STD38NH02LT4 | STMicroelect... | -- | 1000 | MOSFET N-CH 24V 38A DPAKN... |
STD3LN80K5 | STMicroelect... | 0.41 $ | 1000 | N-CHANNEL 800 V, 2.75 OHM... |
STD3NK50ZT4 | STMicroelect... | 0.34 $ | 1000 | MOSFET N-CH 500V 2.3A DPA... |
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