STD3PK50Z Discrete Semiconductor Products

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STD3PK50Z Application Field and Working Principle

As one of the modern transistors, the STD3PK50Z, also known as a N-channel MOSFET, has a wide range of applications, including power and signal management, motor control and power conversion. The STD3PK50Z offers an attractive combination of price and performance with its tough heat dissipation, quick switching, very low on-resistance, highest reliability and low gate charge. It features both low on-resistance and high breakdown voltage, making it the ideal choice for applications such as amplifier linear MOSFET applications, power positioning systems and other high voltage or very low voltage applications.

The STD3PK50Z is a three-terminal MOSFET device, with a drain (D) connected to the source (S) through an N-type MOSFET channel and a gate (G) connected to the source. This type of MOSFET provides very efficient operation and low heat dissipation, since it operates through a field effect, depending on the applied voltage on the gate, the current flowing from the drain to the source can be controlled. The gate voltage at which the transistor starts conducting is referred to as the threshold voltage, Vth. As the applied gate voltage reaches Vth and exceeds it, the transistor starts to conduct, controlling the current flowing from the drain to the source.

The STD3PK50Z is typically used in medium-to-high power applications, and offers tight control of the gate to source voltage (Vgs) ratings. When the gate voltage exceeds Vgs, the MOSFET turns on and the drain current can easily exceed the threshold voltage and the MOSFET starts conducting. This MOSFET can be used in a wide variety of applications such as high-speed switching, audio amplifiers and high voltage power supplies, as it is highly reliable and offers quick switching times. Its key features include: low on-resistance, high breakdown voltage and low gate charge.

The STD3PK50Z has low on-resistance because of its thin channel and the amount of current it can handle. Its maximum on-current is 3A and its total gate charge is 3nC. This relatively low gate charge allows quick switching times, as the channel between the drain and the source can be established quickly. The channel can be shorted to provide latch-up protection when the device is operated in the linear mode. The device also has a low threshold voltage which starts the conduction of current more quickly.

The device also has excellent second-level breakdown voltage for very low voltage applications, enabling it to be ideal for use in battery powered applications as its internal protection circuit can provide additional safety.

In conclusion, the STD3PK50Z is an excellent transistor, perfect for applications such as power and signal management, motor control and power conversion. It features both low on-resistance and high breakdown voltage, making it the ideal choice for applications such as amplifier linear MOSFET applications, power positioning systems and other high voltage or very low voltage applications.

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