Allicdata Part #: | 497-11213-2-ND |
Manufacturer Part#: |
STD3LN62K3 |
Price: | $ 0.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 620V 2.5A DPAK |
More Detail: | N-Channel 620V 2.5A (Tc) 45W (Tc) Surface Mount DP... |
DataSheet: | STD3LN62K3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.38543 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 386pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD3LN62K3 is a two-terminal device that is used in power electronic applications, such as in switching power supplies for high power switch-mode applications. It is specifically designed for both high efficiency and low on-resistance in order to reduce power dissipation and improve the reliabilty. This product is categorised as a single transistor, a type of field-effect transistor (FET).
FETs are a type of transistor that utilizes electric fields to control the flow of current through the device, rather than relying on a gate voltage to control the current like traditional transistors. This gives it several advantages over its predecessors, such as lower power dissipation, higher switching speeds, and higher input impedance, making it a preferred choice for power applications. The STD3LN62K3 is a special type of FET, called a Metal Oxide Semiconductor FET (MOSFET).
The STD3LN62K3 is a single MOSFET, meaning that it is composed of two terminals (source and drain) and controlled by a single gate. Its operation depends on the ability of the gate to modulate the electric field between the source and the drain. When voltage is applied to the gate, it creates an electric field between the source and the drain. This electric field attracts the charges and allows current to flow from the source to the drain.
In power electronic applications, the STD3LN62K3 provides a low on-resistance, an essential feature for guaranteeing high efficiency and low power dissipation. Its low on-resistance guarantees that the voltage drop across the device will be minimal, thus reducing power dissipation. In addition to this, the STD3LN62K3 is designed to be reliable, making it a suitable choice for applications where failure is not an option. Its maximum junction temperature is rated up to 150°C, meaning it can be utilized in high temperature environments.
Overall, the STD3LN62K3 is an excellent device for high power switch-mode applications due to its low on-resistance and high reliability. It is a single MOSFET device, specifically designed for the power electronic industry. Its advantages make it the preferred choice for power applications where high efficiency and low power dissipation are essential.
The specific data is subject to PDF, and the above content is for reference
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