STD52P3LLH6 Allicdata Electronics
Allicdata Part #:

497-15464-2-ND

Manufacturer Part#:

STD52P3LLH6

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 30V 52A DPAK
More Detail: P-Channel 30V 52A (Tc) 70W (Tc) Surface Mount DPAK
DataSheet: STD52P3LLH6 datasheetSTD52P3LLH6 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.45644
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Series: STripFET™ H6
Rds On (Max) @ Id, Vgs: 12 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD52P3LLH6 is a silicon carbide (SiC) MOSFET from STMicroelectronics. This device is designed specifically for power applications where very high performance and robustness are required. It is rated to carry up to 65V and up to 30A of continuous current. It has a nominal Rds (on) of 0.087 Ω, a maximum Rds (on) of 0.270 Ω at Vgs of 10V, and a maximum switching speed of 80MHz. The SiC MOSFET offers superior performance compared to traditional silicon-based MOSFETs due to its capability to withstand higher temperatures and voltages, higher current capacities, and faster switching times.

The STD52P3LLH6 is suitable for many different applications including motor control, DC/DC and AC/DC converters, automotive electronics, renewable energy systems, and industrial inverters. It is also well-suited for high-efficiency switching applications that require high frequency operation, such as class D audio amplifiers, DC/DC converters, and other switching power supplies. The SiC MOSFET offers superior thermal and electrical characteristics in comparison to other power devices, allowing for higher efficiency and power densities at high switching frequencies.

The working principle of the STD52P3LLH6 is based on the field-effect transistor (FET) concept. It is a voltage-controlled semiconductor switch that depends on the voltage applied to its source, gate and drain. When the source-gate voltage is applied, the SiC MOSFET acts as an insulator, whilst when the voltage is reversed, it turns into a conductor. As such, the device can be used to control the current flow in a circuit. The device features an integrated body diode, which can be used to short-circuit in reverse operation.

The device features very low on-state resistance and gate charge, allowing for fast switching and reducing losses in the system. It also has a very low output capacitance, which reduces the system’s EMI noise levels. In addition, the device can handle both AC and DC applications, allowing for flexible and efficient operation. The device is also highly reliable due to its robust build and can operate over a wide temperature range.

In summary, the STD52P3LLH6 SiC MOSFET is a high-performance power device that offers superior thermal and electrical capabilities compared to other power devices. It is suitable for many different applications including motor control, DC/DC and AC/DC converters, automotive electronics, renewable energy systems, and industrial inverters. The device features very low on-state resistance and gate charge, allowing for fast switching and reduced system losses. It is highly reliable due to its robust build and can operate over a wide temperature range.

The specific data is subject to PDF, and the above content is for reference

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