STD5NK52ZD-1 Allicdata Electronics
Allicdata Part #:

497-5965-5-ND

Manufacturer Part#:

STD5NK52ZD-1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 520V 4.4A I-PAK
More Detail: N-Channel 520V 4.4A (Tc) 70W (Tc) Through Hole I-P...
DataSheet: STD5NK52ZD-1 datasheetSTD5NK52ZD-1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 520V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STD5NK52ZD-FET is a single N-Channel MOSFET, providing a low resistance, blowout-free connection between the gate and the source, while maintaining a low current drain. The FET is available in various package configurations, from 6-pins SOIC/TSSOP to 8-pins standard TO-252/TO-220 plastic packages. It also comes with lead-free options for all configurations.

The STD5NK52ZD-FET has a wide range of applications in a variety of industries, including automotive, consumer, industrial, medical, and military. It is commonly used in switching applications, such as AC/DC power supplies, motors, relays, and lighting controllers. It is also suitable for medium-power loads and switching current up to 40V and 250mA. Some of the features that make this FET a popular choice in these applications include the low internal resistance, the low on-resistance, the low on-state voltage, and the high avalanche energy.

The working principle of the STD5NK52ZD-FET can be explained by looking at the Gate/Source terminal. This terminal creates an electric field, which controls the channel conductivity between the source and channel regions between the drain and source regions. The FET is controlled by a voltage applied to the Gate/Source terminal, which, when increased, increases the channel conductivity. When the voltage is decreased, the channel conductivity is reduced, resulting in a decrease in the current. This process is repeated in order to control the current flowing through the device.

The structure of the STD5NK52ZD-FET is similar to other types of MOSFETs, with a gate, source, drain, and N-type channel, and a body-drain junction. The advantage of this FET is its high voltage and current handling capability, which makes it ideal for use in power management applications. Its wide range of package types and configurations, coupled with its low on-resistance, low voltage drop, and high avalanche energy, make it an excellent choice for a variety of applications.

In conclusion, the STD5NK52ZD-FET is an N-Channel MOSFET designed for a wide range of applications, ranging from switching in AC/DC power supplies and motors to relays and lighting controllers. Its low resistance and low current drain are two of the features that make it an ideal choice for these applications. The working principle of the FET involves controlling the current by controlling the voltage applied to the Gate/Source terminal. It also has a variety of package options and lead-free options that make it a great choice for any system.

The specific data is subject to PDF, and the above content is for reference

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