Allicdata Part #: | STD5NK50Z-1-ND |
Manufacturer Part#: |
STD5NK50Z-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 4.4A IPAK |
More Detail: | N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole I-P... |
DataSheet: | STD5NK50Z-1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STD5NK50Z-1 is a field-effect transistor (FET) used in a variety of applications. This type of transistor is made up of two thin layers of semiconductor material, which act as a gate that controls the flow of current between two reversely polarized terminals. The STD5NK50Z-1 is a single site FET, otherwise known as a single FET.
The application field of the STD5NK50Z-1 includes power switches, amplifiers, rectifiers, voltage regulators, inverters, and other electronic devices. It can be used in high power switch applications, where low on resistance and low gate charge make it an ideal choice. It can also be used to deliver a high current, as it offers a low thermal resistance. In addition, it can be used in high frequency applications, as it offers excellent switching characteristics with low gate charge and low-capacitance characteristics. Other applications include motor control, motion control, high speed sensor, automotive, and audio/video applications.
The working principle of the STD5NK50Z-1 FET is based on the movement of electron carriers across the oxide layer that separates the two semiconductor layers. When a voltage is applied to the gate, electron carriers are attracted to it, and the number of carriers increases due to its positive charge. As the carriers increase, the channel between the two electrodes (source and drain) increases in size and resistance decreases. When the gate voltage is removed, the electrons are repelled, and the channel size and resistance return to their original state. By controlling the amount of current flowing across the channel, the FET is used to provide amplifying and switching functions.
The STD5NK50Z-1 FET has several advantages over other types of FETs. It has a low on resistance, which means the energy needed to turn it on is relatively small compared to other types. This makes it ideal for high power applications, as it allows for more efficient operation. It also has low gate charge and low-capacitance characteristics, which makes it suitable for high frequency applications. Lastly, its excellent switching characteristics make it suitable for a wide range of applications.
In conclusion, the STD5NK50Z-1 single FET is a versatile transistor used in a variety of applications. Its low on resistance and low gate charge make it ideal for high power and high frequency applications, while its switching characteristics make it suitable for a range of electronic devices. In addition, its low-thermal resistance makes it an ideal choice for delivering high current.
The specific data is subject to PDF, and the above content is for reference
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