STD55NH2LLT4 Discrete Semiconductor Products |
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Allicdata Part #: | 497-4104-2-ND |
Manufacturer Part#: |
STD55NH2LLT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 24V 40A DPAK |
More Detail: | N-Channel 24V 40A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | STD55NH2LLT4 Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 24V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 990pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Working Principle of STD55NH2LLT4
The STD55NH2LLT4 is a PowerTrench® MOSFET device manufactured by ON Semiconductor. It is an N-Channel Depletion Mode Enhancement MosFet, meaning that it features a low on-resistance and low input capacitance. It is designed to handle both normal-mode and reverse-mode operations efficiently, making it an ideal solution for many applications.
Applications of the STD55NH2LLT4
The STD55NH2LLT4 can be used for a variety of applications, including power switches, synchronous rectifiers, H-bridges, and level shifters. This device is well suited for use in DC motor control, home appliances, motor control and drive systems, power supplies, and other power management applications.
Device Features
The STD55NH2LLT4 MOSFET offers a number of advantages over other power management devices. It is designed to be easy to use, with an easy-to-understand layout. Additionally, it offers very low on-resistance, allowing it to switch higher currents with very little power loss. The low input capacitance also reduces the number of external components needed, which further simplifies its use.The STD55NH2LLT4 also features a built-in high body diode for reverse-mode operations, reducing the need for external components. This provides cost savings, as well as improved current balance and reduced noise. Additionally, the device can be used for symmetric, balanced, and unbalanced circuit operations.
Operation Principles
The STD55NH2LLT4 is an N-Channel Depletion Mode Enhancement MOSFET device. It works by using an electric current to control the threshold voltage of the gate-source junction. This allows the device to be turned on and off by a small electric current, making it highly efficient. The gate voltage is also adjustable, so the amount of current that flows through the device can be changed.When the gate voltage is low, the threshold voltage, VTh, is increased, which turns the device off. When the gate voltage is high, the threshold voltage decreases, allowing the MOSFET device to be turned on. The device is typically controlled with a logic signal, such as a digital signal or a pulse width modulation signal.
Conclusion
The STD55NH2LLT4 is a highly efficient and versatile MOSFET device manufactured by ON Semiconductor. It offers low on-resistance, low input capacitance, and a built-in body diode, making it ideal for a variety of power management applications. Additionally, its operation principles are easy to understand, and its design allows for a simplified circuit layout.
The specific data is subject to PDF, and the above content is for reference
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