STD5N95K3 Discrete Semiconductor Products

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The STD5N95K3 is a single n-channel enhancement-mode power field-effect transistor (FET) that features low on-resistance and fast switching speeds, making it ideal for personal electronics like battery-powered consumer medical, communications and audio/video applications.

The device\'s on-resistance (R DS(ON)) is typically rated at 5.5 mΩ at a drain-source voltage of 9 V, while the maximum drain current (I D(MAX)) is as high as 55A. Its fast switching speeds make it particularly useful for low-voltage, high-current applications, as well as for high-frequency analog signal applications.

The STD5N95K3 FET utilizes a single n-channel field-effect structure wherein the source and drain electrodes are directly connected to the gate electrode. This structure allows for a very low on-resistance when the gate voltage is low, and for a high on-resistance when the voltage is high. The low on-resistance is possible due to the low voltage of the applied gate, which ensures that the current flowing from source to drain is not limited by the gate voltage. The high on-resistance is due to the decreased current flowing when the higher voltage is applied.

The STD5N95K3 is a very versatile FET device and has a wide variety of application options. It is often used to provide fast on/off switching in low- voltage, high-current enhancement-mode circuits, and can be used in applications such as audio amplifiers, cellular phones, and digital video mixing boards. In addition, it can be used to provide power MOSFET protection or level conversion between high-frequency analog signals and logic voltages.

In summary, the STD5N95K3 is a single n-channel enhancement-mode power field-effect transistor (FET) that features low on-resistance and fast switching speeds. Due to its versatile functionality, it is well-suited for a diverse range of applications, from consumer electronics and audio/video applications to high-frequency analog signal level conversion.

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