STD5N52U Discrete Semiconductor Products |
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Allicdata Part #: | 497-10017-2-ND |
Manufacturer Part#: |
STD5N52U |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 525V 4.4A DPAK |
More Detail: | N-Channel 525V 4.4A (Tc) 70W (Tc) Surface Mount DP... |
DataSheet: | STD5N52U Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.42601 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 529pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16.9nC @ 10V |
Series: | UltraFASTmesh™ |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 525V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD5N52U is a semiconductor device designed to control and switch currents in electronic circuits of various types. It belongs to a family of transistors called Field Effect Transistors (FETs). FETs generally operate by modulating the electric field present in the transistor rather than relying on current flow measures. The STD5N52U specifically belongs to a type of FET called a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is used in a variety of applications such as power amplification, voltage regulation, line switching, and motor driving.
The working principle of an STD5N52U MOSFET can be understood by studying the basic electronics components and circuitry involved in the construction of the FET device. There are two main components - the gate and the source. The gate is the controlling element that regulates the flow of current between the source and the drain. It is usually formed of a metal layer over a semiconductor substrate. The source is the connection point where current enters the gate and then flows out to the drain. Alternatively, current may enter through the drain and flow out to the source.
The gate acts as a capacitive element which can store an electric charge. This charge can be altered by changing the voltage applied to the gate. When a positive voltage is applied to the gate, it behaves like a transistor and allows the current to flow from source to drain. When the gate is left open to the source, it blocks current and acts as an open circuit. When the voltage applied to the gate is negative, it acts as a diode and blocks any current from entering the source.
The heart of the operation of the STD5N52U lies in the construction of the gate and its relationship to the substrate. The metal layer in the gate forms a channel between the source and the drain. Not metal contacts, or contacts of the same type, will allow the electrons to flow in only one direction at a time. By altering the voltage applied to the gate, the amount of current that is allowed to pass through the channel at any given time, and hence the amount of power available to the load, can be controlled.
The STD5N52U is ideal for applications requiring high-power control and switching, such as high-power amplifiers and motor drivers. Its relatively low saturation voltage and low threshold voltage make it suitable for most applications. It is also suitable for digital switching circuits, and its low capacitance allows a low switching time. The STD5N52U is also well suited to applications which require high-voltage isolation, such as power supplies, radio receivers, and data acquisition systems.
Given its wide range of applications and its easy to use design and construction, MOSFETs in general, including the STD5N52U, have become an essential part of the electronics industry. The device has a huge variety of uses in all kinds of industries, including automotive, medical, communications, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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