Allicdata Part #: | STD5407NNT4G-ND |
Manufacturer Part#: |
STD5407NNT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V DPAK-3 |
More Detail: | |
DataSheet: | STD5407NNT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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The STD5407NNT4G is a high-voltage single N-channel MOSFET semiconductor device. It is designed to be used as a switch in both ac and dc circuits and is suitable for use in the automotive, communication, computer, and consumer electronics industries. This device features a low on-state resistance, fast switching speed, and improved power dissipation. It is manufactured using high-quality silicon materials and has an extended temperature range. The STD5407NNT4G is available in different packages and is capable of handling voltages up to 500V.
Applications of the STD5407NNT4G include, but are not limited to, dc-to-dc converters, switching power supplies, and motor control. It can also be used as an on/off switch in digital circuits and for controlling and protecting high voltage loads in automotive and industrial equipment. The MOSFET is suitable for use in the large-signal and load-switch applications, where noise and voltage transients must be avoided. It is also perfect for use in RF circuits, where its low on-state resistance helps reduce noise. This device is also a good choice for analog circuits as it offers good distortion characteristics and improved linearity.
The working principle of the STD5407NNT4G is based on the MOSFET (metal-oxide semiconductor field-effect transistor) technology. The MOSFET is a four-terminal device, with a source region, a drain region, a gate region, and a body region. The device is usually created by doping two regions in a semiconductor substrate, a source and a drain, such that an electrical field is generated when an electrical potential is applied to the gate region. The current flows between the source and the drain and the current flow is then controlled by the gate voltage, which makes the MOSFET a very efficient current switch.
The STD5407NNT4G is a high voltage N-channel MOSFET and it is designed to be used in different circuits and applications, where it can efficiently switch or control current flow. Its excellent characteristics, such as low on-state resistance, fast switching speed and improved power dissipation make it a suitable choice for various automotive, communication, computer and consumer electronics applications. Its four input regions, namely source, drain, gate, and body, ensure efficient switching current and its extended temperature range give it added advantage for use in harsh environment.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STD5NK50Z-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4.4A IPA... |
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STD5150TR | SMC Diode So... | 0.11 $ | 2500 | DIODE SCHOTTKY 150V DPAKD... |
STD5407NNT4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 40V DPAK-3 |
STD5N52U | STMicroelect... | 0.48 $ | 1000 | MOSFET N-CH 525V 4.4A DPA... |
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STD5200TR | SMC Diode So... | 0.11 $ | 1000 | DIODE SCHOTTKY 200V DPAKD... |
STD5100CTR | SMC Diode So... | 0.11 $ | 1000 | DIODE SCHOTTKY 100V DPAKD... |
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STD5N60M2 | STMicroelect... | 0.49 $ | 1000 | MOSFET N-CH 600V 3.7A DPA... |
STD5N80K5 | STMicroelect... | 0.46 $ | 2500 | N-CHANNEL 800 V, 1.50 OHM... |
STD5NM60T4 | STMicroelect... | 0.74 $ | 5000 | MOSFET N-CH 600V 5A DPAKN... |
STD5406NT4G-VF01 | ON Semicondu... | 0.0 $ | 5000 | MOSFET N-CH 40V 12.2A DPA... |
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