Allicdata Part #: | 497-10778-2-ND |
Manufacturer Part#: |
STD5N62K3 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 620V 4.2A DPAK |
More Detail: | N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DP... |
DataSheet: | STD5N62K3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.50860 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ST5N62K3 is a type of Field Effect Transistor (FET) that belongs to the single FET category. It is a surface mounted device (SMD) which means that it is designed to be installed directly to the surface of the circuit board instead of through the insertion. This helps to reduce the process time of the board assembly as well as to increase its reliability.
The SMD FET is built with a semiconductor gate structure that is typified by a gate oxide layer which separates the source and the drain. Depending on the type of design, the gate oxide layer can also be used to control the flow of current between the source and the drain. The gate oxide layer also provides an isolation from the rest of the environment in order to minimize the effect of EMI on the circuit components.
The ST5N62K3 is engineered to be used in applications where high-level of EMI protection is necessary due to its ability to provide superior switching characteristics. It is designed to be compact which makes it suitable for use in a number of high-density circuit applications. Moreover, its high transient current capacity makes it a suitable choice for use in low power applications.
The working principle of the ST5N62K3 is based on a MOSFET technology which stands for metal oxide semiconductor field effect transistor. This type of technology works by utilizing a metal oxide that serves as a semiconductor material. Essentially, the metal oxide will act as a gate that will control the flow of electrons and current between the source and the drain.
When a voltage is applied to the gate, it will create an electric field that will cause the metal oxide to act as a semiconductor. This in turn will allow for electrons and charges to pass from the source to the drain. When the voltage is removed, the electric field will dissipate and the flow of current will be stopped.
The ST5N62K3 has a wide range of applications where superior EMI protection and high-level transient current are necessary. It is typically used in low-power circuits, handheld devices, and digital electronics. Its low-noise and low-power design makes it a suitable choice for many consumer electronics applications. Its superior switching characteristics also make it ideal for use in applications that require fast-switching devices.
In conclusion, the ST5N62K3 is a type of single MOSFET that is designed to offer superior switching and EMI protection. It is used in a wide range of applications including low-power circuits, handheld devices, and digital electronics. Its small size makes it suitable for high-density applications and its superior switching characteristics make it ideal for applications that require fast-switching devices.
The specific data is subject to PDF, and the above content is for reference
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