Allicdata Part #: | 497-12786-5-ND |
Manufacturer Part#: |
STD5NM60-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 5A IPAK |
More Detail: | N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK |
DataSheet: | STD5NM60-1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STD5NM60-1 is a versatile transistor module that is used in multiple electrical and electronic applications. It is a single level MOSFET (metal-oxide-semiconductor field-effect transistor), an application-specific integrated circuit (ASIC) which is designed and fabricated for applications where extremely compact size and a minimum power requirement are the main considerations. This type of transistor is used in applications such as direct current (DC) motor drives, inverters, and digital circuits. This module is also suitable for switching power supply and other power switching applications.
The STD5NM60-1 features a low on-resistance and low on-voltage drop, as well as a minimum gate voltage threshold. This module has a wide range of working power, which allows it to be used in various applications with different power levels. Its MOSFET structure makes it highly efficient and reliable.
The working principle of the STD5NM60-1 is relatively simple. When a potential is applied to it, the transistor will conduct, allowing electricity to pass through it to the load circuit. This is accomplished by an arrangement known as the gate-source voltage arrangement. The gate-source voltage arrangement consists of two electrodes, which are connected through the transistor. The gate electrode is used to control the flow of electrons between the source and the drain, whilst the source electrode is used to provide a potential for the electrons to flow through the transistor. This arrangement allows current to flow between the source and the drain when the gate voltage is high enough to turn the device on. Conversely, when the gate voltage is below a certain level, the transistor will block the current.
The STD5NM60-1 is a high-performance device designed to meet the needs of various applications. Its wide working power range, low on-resistance and low on-voltage drop, as well as its low gate voltage threshold, make it an ideal choice for power electronic applications that require extremely efficient and reliable switching.
The STD5NM60-1 is a single level MOSFET, which means it can be used for single pole switching applications. This makes it suitable for controlling the current flow in a variety of applications, such as DC motor drives, inverters, power switches, LED drivers, and more. The device is also compatible with most power supplies, making it a great choice for many power systems.
The STD5NM60-1 is an extremely efficient, reliable, and powerful transistor module. With its wide power range and low gate voltage threshold, it is a great solution for applications where small form factor, low power consumption, and high performance are the most important considerations.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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STD5NM60-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 600V 5A IPAKN... |
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STD50N03L-1 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 30V 40A IPAKN... |
STD5N20T4 | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 200V 5A DPAKN... |
STD5NK50Z-1 | STMicroelect... | -- | 1000 | MOSFET N-CH 500V 4.4A IPA... |
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STD5407NNT4G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 40V DPAK-3 |
STD5N52U | STMicroelect... | 0.48 $ | 1000 | MOSFET N-CH 525V 4.4A DPA... |
STD5N95K5 | STMicroelect... | 0.71 $ | 1000 | MOSFET N-CH 950V 3.5A DPA... |
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STD5100TR | SMC Diode So... | 0.11 $ | 1000 | DIODE SCHOTTKY 100V DPAKD... |
STD5200TR | SMC Diode So... | 0.11 $ | 1000 | DIODE SCHOTTKY 200V DPAKD... |
STD5100CTR | SMC Diode So... | 0.11 $ | 1000 | DIODE SCHOTTKY 100V DPAKD... |
STD5N20LT4 | STMicroelect... | -- | 1000 | MOSFET N-CH 200V 5A DPAKN... |
STD5NK50ZT4 | STMicroelect... | 0.51 $ | 1000 | MOSFET N-CH 500V 4.4A DPA... |
STD5N60M2 | STMicroelect... | 0.49 $ | 1000 | MOSFET N-CH 600V 3.7A DPA... |
STD5N80K5 | STMicroelect... | 0.46 $ | 2500 | N-CHANNEL 800 V, 1.50 OHM... |
STD5NM60T4 | STMicroelect... | 0.74 $ | 5000 | MOSFET N-CH 600V 5A DPAKN... |
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