STD55N4F5 Discrete Semiconductor Products |
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Allicdata Part #: | 497-10706-2-ND |
Manufacturer Part#: |
STD55N4F5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 55A DPAK |
More Detail: | N-Channel 40V 55A (Tc) 60W (Tc) Surface Mount DPAK |
DataSheet: | STD55N4F5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 27.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD55N4F5 is part of a relatively new class of semiconductors known as field effect transistors (FETs). As such, they are found most commonly in the field of digital electronics, microcontrollers, and even some medical equipment. FETs boost the amount of current or voltage that can be produced with a given amount of power.
FETs come in two basic types: Metal-Oxide-Semiconductor (MOS) FETs and junction FETs. The MOS FET is the most common type of FET, and is more easily used in digital circuits than the junction FET. The STD55N4F5 is a MOS FET device, meaning it is a single-bit transistor.
The most notable feature of the STD55N4F5 MOS FET is the built-in P-Channel FET structure. It has a drain to source resistance of 50 Ohms, which is low enough allowing it to drive up to hundreds of milliamps of current. The gate voltage is normally held at 5V when in the off-state, meaning that a digital logic signal is required to bring it into an on-state.
When the FET is switched on, current flows freely from the drain to the source, allowing a voltage to be applied to the drain terminal. The source will always receive a voltage that is slightly lower than the voltage applied to the drain. This difference in voltage is known as the Gate Source Voltage, or Vgs.
The current passing through the channel of the FET is proportional to the value of the Gate Source Voltage. Therefore, in order to increase or decrease the amount of current passing through the channel, the Vgs can be varied. This ability to vary the Vgs is what makes the FET such a versatile and powerful component.
The STD55N4F5 has a typical voltage control range of 0.5V to 5V, meaning that it can be used to create a wide range of values, from very small to very high, depending on the VGS supplied. The output current range from 0.2mA to 2A.
In terms of applications, the STD55N4F5 is most commonly used in digital electronics applications, as well as in RF power amplifiers and power supplies. In addition, it can be used for power switching and for control signals, due to its impressive voltage control range. The STD55N4F5 is also often used for motor control, since it can produce high current pulses, making it ideal for this purpose.
Overall, the STD55N4F5 provides an effective solution for many types of electronic and digital applications. With its low on-resistance and wide voltage control range, it is a powerful addition to any circuit. Additionally, with its small size and wide availability, it is an affordable and convenient component for any application.
The specific data is subject to PDF, and the above content is for reference
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