STD5N20T4 Discrete Semiconductor Products

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The STD5N20T4 is a type of Power MOSFET or Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This transistor, made from silicon and designed for high-frequency switching applications, is available in three terminal packages. With its 200V drain-to-source voltage and 5 Amp drain current, it is especially useful for linear, synchronous, and switching power supplies.

The structure of MOSFETs, such as the STD5N20T4, can be found in various sizes and configurations, such as the ones that use metal-oxide semiconductor technology. The structure consists of a gate, which is essentially a metal layer, and a source and a drain, which are essentially metal layers embedded in an insulating material, such as sapphire or silicon dioxide. The amount of current passing through the transistor is determined by the voltage applied to its gate.

The drain-sourced voltage rating of the STD5N20T4 is 200 volts and the drain current rating is 5 Amps. It comes in three different packages, namely the TO-220, the TO-251, and the DPAK. The DPAK package is used for applications where high power is required, and the TO-220 and the TO-251 package are suitable for low-power applications. The transistor operates over the temperature range of -55°C to +150°C. It has a maximum drain-source on-state resistance of 0.017 ohms and an extended safe operating area.

When the transistor is in its off state, no current passes through the drain-source (D-S) path. However, when a positive voltage is applied to the gate, it causes the transistor to turn on, connecting the source and drain, and allowing current to flow through the drain-source path. The amount of current flowing through the transistor is dependent upon the voltage applied to the gate and the resistance of the drain-source path, which is determined by the transistor’s characteristics and the load connected to it.

The STD5N20T4 is widely used in switching applications such as inductive loads, relay control circuits, bulky resistive loads, and low-side switching. It is also suitable for linear circuits, such as choppers and switching convertors, and for synchronous rectifiers. The device has the advantage of lower on-state resistance, enabling it to switch faster, dissipate less power, and reduce system losses.

In addition to performance benefits, the STD5N20T4 also has some significant safety features. The build-in ESD protection helps protect the device from electrostatic damage, while the over-temperature protection capability helps maintain thermal stability. The device also has a precise over-current protection feature, which helps protect it against current overloads.

In summary, the STD5N20T4 is a high-frequency switching transistors widely used in a range of applications. Its low on-state resistance helps reduce power dissipation and system losses, while its safety features help ensure optimal performance even in demanding environments. This makes it a preferred choice for industrial, automotive, and consumer applications, and for general-purpose low-power switching applications.

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