STD5NK50ZT4 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	535pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	1.5 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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Introduction

The STD5NK50ZT4 is a high-voltage, low-on-resistance N-channel enhancement mode field effect transistor (FET). It is manufactured with the Zener-trench technology, and is a power MOSFET transistor. It is rated to support a maximum of 500 V and 4 A in continuous operation, with a channel resistance or RDS(on) of 0.44 Ω. It is used in a variety of applications such as power switches, automotive applications, motors, and other applications requiring high voltage operation and small size.

Electrical Characteristics

The STD5NK50ZT4 N-channel enhancement-mode transistor has a drain-source breakdown voltage (BVD£ºDSS) of 750 V, and can support a 4A drain current. It also has a typical turn-on voltage of 2.4 V and a maximum operating temperature of 175 °C. It has a low gate charge of 13 nC at a voltage of 10 V, and a high drain-source speed of 30 nS.

Package Type

The STD5NK50ZT4 is offered in three-pin TO-220F and three-pin TO-263 packages. The TO-220F package is suitable for surface mounting applications and includes an isolated heat tab. The TO-263 package is suitable for surface mounting on PCB\'s and includes an isolated heat tab.

Application Fields

The STD5NK50ZT4 N-channel enhancement-mode transistor is suitable for a variety of applications, such as switching and controlling inductive load, as well as voltage regulators, current sense circuits, and motor drives. It is also suitable for single-pole, single-throw convolution applications, such as DC-DC converters, high-side switches, and over-voltage protection circuits.

Working Principle

The STD5NK50ZT4 N-channel enhancement-mode transistor is based on the principle of field effect. When a voltage is applied to the gate terminal, a conductive channel is formed between the source and the drain terminals. This enables current flow from the source to the drain. When the voltage is removed from the gate terminal, the channel is switched off, and current does not flow from the source to the drain.

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