STD5NM60T4 Allicdata Electronics
Allicdata Part #:

497-3163-2-ND

Manufacturer Part#:

STD5NM60T4

Price: $ 0.74
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 5A DPAK
More Detail: N-Channel 600V 5A (Tc) 96W (Tc) Surface Mount DPAK
DataSheet: STD5NM60T4 datasheetSTD5NM60T4 Datasheet/PDF
Quantity: 5000
2500 +: $ 0.66803
Stock 5000Can Ship Immediately
$ 0.74
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD5NM60T4 is an advanced high-voltage, high-current dual N-channel MOSFET that is designed to provide superior performance in a variety of applications. This MOSFET has been optimized for both performance and cost, and is capable of handling up to 600V and 15A. Its low reverse body diode drop and low gate charge make it ideal for high-efficiency applications such as switching mode power supplies and high-efficiency motor controls. The device is also very well suited for high-current switching in both low-side and high-side configurations.

The working principle of the STD5NM60T4 is based on its N-channel MOSFET structure. The device consists of two N-channel transistors connected in parallel, with a single drain and source. When an appropriate voltage is applied to the gate of the MOSFET, a majority carriers transfer occurs in the channel area. This results in a decrease in the resistance of the channel and allows current to easily flow from the drain to the source.

The STD5NM60T4 is commonly used in a variety of applications, including high-current switching, motor control, and power supply design. The device can be used in both switching and linear operations, and is well-suited for use in high frequency circuits. Its low gate charge and low power losses make it ideal for switching high frequency circuit designs. The device is also well suited for use in low-side and high-side drive configurations. It is a versatile component that can handle a wide range of applications.

In addition to its high-current performance and low power losses, the STD5NM60T4 also has an excellent thermal conductivity, which allows it to operate at junction temperatures up to 150°C. This makes it ideal for high temperature operating environments such as those found in automotive applications. Additionally, the device has a low input capacitance and fast switching times, which make it an excellent choice for applications where speed is important.

The STD5NM60T4 is an excellent choice for a variety of high-current applications, thanks to its high-voltage and high-current performance, low power losses, and excellent thermal conductivity. Its low gate charge and fast switching times make it an ideal component for applications requiring high frequency operation. Additionally, the device is well-suited for use in low-side and high-side drive configurations, and is a versatile component that can handle a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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