Allicdata Part #: | 497-5890-2-ND |
Manufacturer Part#: |
STD5NK60ZT4 |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 5A DPAK |
More Detail: | N-Channel 600V 5A (Tc) 90W (Tc) Surface Mount DPAK |
DataSheet: | STD5NK60ZT4 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.46749 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The STD5NK60ZT4 MOSFET is a single N channel enhancement type with a maximum Junction-to-Case thermal resistance of 1.1oC/W. It is designed for use in switching applications and comes in a TO-220AB package. This particular MOSFET allows for excellent on-state RDS(on) and low gate charge which facilitates good efficiency, low conduction losses and allows easy control of the output voltage. In addition, this device also features a fast switch time and has a low gate-to-source capacitance which helps minimize switching times.
The operation of an STD5NK60ZT4 MOSFET can be understood in two distinct stages – an ‘On’ stage and an ‘Off’ stage. The MOSFET is said to be ‘On’ when the source is connected to the drain and there is a voltage applied to the gate. This causes the drain-source resistance (RDS(on)) of the MOSFET to become extremely low and the current flow from source to drain is known as ‘On-State current (Ion)’. During this ‘On’ stage, the drain-source voltage (Vds) is typically proportional to the gate voltage (Vg) and is the same as the supply voltage (Vin) applied to the gate.
In the ‘Off’ stage, the source and gate are not connected and there is no voltage applied to the gate. At this time, the MOSFET is said to be ‘Off’ and the drain-source resistance (Rds (off)) is extremely high. This is known as ‘Off-state resistance (Rds (off))’.
The STD5NK60ZT4 MOSFET is used in a variety of applications, but it is most commonly used in automotive and industrial power supplies, computer power supplies, motors and motor controls, radio-frequency applications, and renewable energy systems. In these applications, the MOSFET is used as a switch to control power to a device or system. The MOSFET can also be used as a voltage regulator or amplifier.
For example, in a computer power supply, the MOSFET can be used to control the power to the processor of a PC. This is done by using the MOSFET to control the voltage across the CPU, allowing for the supply current to be adjusted according to the demand of the processor. In this way, the processor runs at the optimum voltage and current levels, enhancing the performance and efficiency of the computer. In addition, the MOSFET can also act as an amplifier in radio-frequency applications. By applying a small gate-source voltage, the MOSFET can amplify a radio-frequency signal, allowing it to be received more effectively.
The STD5NK60ZT4 MOSFET is a versatile and reliable device that has a wide variety of applications. Its fast switching times and low RDS(on) resistance make it suitable for use in a range of applications that require efficient power management. As a result, it is widely used in automotive, industrial, and renewable energy systems, as well as in computer systems and radio-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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