STD5NK40Z-1

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	305pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Series:	SuperMESH™
Rds On (Max) @ Id, Vgs:	1.8 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STD5NK40Z-1 is a superbly designed MOSFET which is highly coveted by engineers. It is a single N-channel power MOSFET specifically designed for applications that require an RDS(on) of just 4 mΩ, a maximum drain current of up to 98 A, and a low drain-source on-state resistance. Typically, this type of MOSFET is used in high current density applications such as motor control, high efficiency switching power supplies, DC-DC converters, and high current load switching.

Applications of the STD5NK40Z-1

The typical applications of the STD5NK40Z-1 MOSFET include high frequency switching, power supplies, and power converters. It is also suitable for low output noise, class-D amplifier applications and AC-DC synchronous rectifier, bridge circuits. The low RDS(on) and low gate charge are very useful in reducing conduction loss, as well as switching losses. Moreover, its high current capability also allows for maximum power dissipation.

Working Principle

The MOSFET is a type of transistor whose operation is based on the ability of a material to conduct electric current between the gate and source when a voltage is applied. This type of MOSFET works by having a gate electrode, a source electrode, and a drain electrode. When a positive voltage is applied to the gate electrode, it sets up an electric field between the gate and source. This electric field causes a few electrons to flow from the source to the drain, thus creating a current between the two. This current is controlled by the voltage applied to the gate, thus making the MOSFET an efficient and reliable device for controlling electronic circuits.

Advantages of the STD5NK40Z-1

The key advantages of the STD5NK40Z-1 MOSFET are its exceptional high current capability and its low RDS(on). Additionally, it has low gate charge and fast switching speeds which make it incredibly versatile and efficient. Furthermore, the MOSFET is highly reliable, making it an optimal choice in many applications. In summary, the STD5NK40Z-1 MOSFET is a power device that is ideal for a number of applications requiring high current and low RDS(on). It is an essential component for many industrial and commercial electronics applications. The working principle of the MOSFET enables it to be highly efficient and reliable. Lastly, the advantages of the MOSFET include its exceptional current capability, low on-resistance (RDS(on)), and fast switching speed.

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