STF10LN80K5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STF10LN80K5 is a MOSFET (metal–oxide–semiconductor field-effect transistor) device, more specifically, a Through-Hole, 200V, N-Channel, Single Dual-gate MOSFET. It’s ideal for use in a variety of functional and power applications where fast switching and low power dissipation are essential. This N-Channel MOSFET, in particular, features dual gate features, a lower on-resistance, and a reduced total gate-charge, making it ideal for pulse width modulation and digital control purposes. It is very popular in the electronic industry, due to its excellent performance characteristics and wide range of available applications.

The STF10LN80K5is a particularly high-performance and versatile MOSFET. It can be used in a variety of applications, from loud speakers to power amplifiers, from industrial control to commercial applications. It can also be used for DC to DC converters, switching and linear regulators, and high frequency power amplifiers.

One of the main features of the STF10LN80K5 is its high-speed switching capabilities. The device features a maximum drain to source resistance of 8Ω, with a maximum drain current of 800mA. This allows the device to rapidly switch between high and low logic states, ideal for applications that require fast-acting circuits. Additionally, the STF10LN80K5 is capable of handling high-frequency currents with its maximum frequency of operation at 40MHz.

The STF10LN80K5 also has very low on-resistance. This device has a maximum on-resistance of 0.4Ω, which makes it highly efficient in power applications as it improves thermal performance and reduces power losses. Additionally, this low on-resistance makes it highly suitable for pulse-width modulation applications, allowing for precise and efficient control of the switching signal.

The STF10LN80K5 also has a relatively low input capacitance, which makes it highly suitable for applications requiring low power consumption. The maximum input capacitance of the device is 11pF, which is lower than many similar MOSFET devices. This makes it ideal for applications where a reduced power consumption is desired.

In terms of its gate construction, the STF10LN80K5 is a dual-gate MOSFET, making it highly suitable for applications requiring low total gate charge. The device features a maximum gate-charge of 10nC, which makes it highly efficient for power applications, ensuring minimal power losses. Additionally, the STF10LN80K5’s dual-gate structure gives the device higher temperature and avalanche robustness, making it capable of handling the toughest operating conditions.

When considering the working principle of the STF10LN80K5, the MOSFET has a basic two-gate structure, consisting of a gate and a channel. The channel is divided into two parts, the source and the drain. Electrons flow into the device through the source, passed through the channel and then back to the drain. The gate of the device is controlled by a voltage source, which determines the amount of current flowing through the device, thus regulating the device’s overall operation.

The STF10LN80K5 is a highly efficient and versatile MOSFET device. It is capable of handling a wide range of operational conditions and applications and is a popular choice amongst electronic engineers. Its fast switching time and low power dissipation make it ideal for a variety of applications, such as loud speakers, industrial control, power amplifiers and high-frequency power amplifiers. In addition, its low on-resistance, low input capacitance and dual-gate construction enhance its utilization for power applications, pulse-width modulation and digital control.

The specific data is subject to PDF, and the above content is for reference