Allicdata Part #: | STF12PF06-ND |
Manufacturer Part#: |
STF12PF06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 60V 8A TO-220FP |
More Detail: | P-Channel 60V 8A (Tc) 225W (Tc) Through Hole TO-22... |
DataSheet: | STF12PF06 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 225W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF12PF06 is a silicon N-Channel MOSFET (metal oxide semiconductor field effect transistor) manufactured by STMicroelectronics. It is used in a variety of applications, ranging from power management to signal switching and amplification.
The STF12PF06 is a P-channel MOSFET. This means that the majority charge carrier, or the type of charge it is designed to handle, is negative. It is also a single MOSFET – as opposed to a complementary pair – meaning that it does not require two identical transistors to operate. It also has a higher voltage rating than a dual MOSFET, making it suitable for a greater number of applications.
The STF12PF06 utilizes a new process technology based on a novel design architecture to achieve greater efficiency and performance. This technology is combined with the latest packaging techniques and materials to provide excellent thermal and electrical properties.
The STF12PF06 operation begins with a gate, which is an insulated-gate field-effect transistor. It is protected by a gate oxide layer and is used to control the current through a channel in the underlying semiconductor material. When a negative gate voltage is applied, the channel is opened and current flows through it. The gate voltage must be properly adjusted in order to optimize the performance of the device.
The source and drain of the MOSFET are also important. The source is the ground connection, while the drain is where the current leaves the device. The resistance between the source and drain is called the channel resistance. By controlling the gate voltage, the current through the channel can be adjusted to meet the specific needs of a given application.
The STF12PF06 also has an adjustable breakdown voltage. This voltage controls the maximum current that can be conducted through the device under normal conditions. If this voltage is exceeded, the device will be destroyed.
The STF12PF06 can be used in all types of electronic systems, from power management to noise suppression and audio signal amplification. It is also useful in robotics and other automatic systems, providing reliable operation with minimal power consumption.
The STF12PF06 is a versatile device with a wide range of applications. It can be used in a variety of circuits to provide efficient power management, signal amplification and noise suppression. Thanks to its superior electrical and thermal properties along with its new process technology, it offers excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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