Allicdata Part #: | 497-12564-5-ND |
Manufacturer Part#: |
STF10NM60N |
Price: | $ 2.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A TO-220FP |
More Detail: | N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-2... |
DataSheet: | STF10NM60N Datasheet/PDF |
Quantity: | 891 |
1 +: | $ 2.12310 |
50 +: | $ 1.71158 |
100 +: | $ 1.54048 |
500 +: | $ 1.19815 |
1000 +: | $ 0.99275 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF10NM60N is a type of field effect transistor, specifically a MOSFET, which stands for metal oxide semiconductor field effect transistor. STF10NM60N is a type of single MOSFET, which means it is a diode-connected device consisting of a single drain and source. The single MOSFET is an efficient switch which is widely used for a variety of applications.
One of the main applications for the STF10NM60N is as an amplifier. The MOSFET is capable of amplifying input signals with a gain of up to 60 dB, providing an output which is much stronger than the input. This is achieved through the use of a drain-source voltage which is relatively low, making it ideal for applications where power consumption needs to be kept to a minimum. The MOSFET can also be used as a high-speed switch, allowing signals to be rapidly switched on or off. This is very useful in applications such as switching power supplies where quick action and low power consumption is essential.
The STF10NM60N is designed for use in power switching applications. Its low threshold voltage and low gate-source capacitance make it well-suited for this purpose. It is also suitable for use in synchronous buck converters and other power conversion designs. Additionally, the high-frequency response which is enabled by the low gate threshold makes it ideal for switching regulators, voltage converters and converter controllers.
The STF10NM60N is easy to use, thanks to its logical logic inputs and its low level drain-to-source resistance. The logic inputs are simple to interface with, and the low level drain-to-source resistance makes it easy to control the level of current through the device. This makes it ideal for applications where precise control of the current is required, such as motor control.
The STF10NM60N’s working principle is based on the principle of electrostatic charge transfer. This is where an electric field is created by applying a voltage between two electrodes. This voltage causes a current to flow, which can be used to control the power flow between the two electrodes. The current flow is then used to control the magnitude of the electric field and the amount of power being transferred between the two electrodes.
The STF10NM60N is capable of handling large amounts of current, making it suitable for a wide range of applications. It is also designed for use in a wide variety of environments, such as severe temperature conditions. Additionally, the device is designed for use in high-voltage applications, making it an ideal choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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