STF13NM50N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STF13NM50N is a metal oxide semiconductor field effect transistor (MOSFET) designed to robustly handle switchings, act as a memory cell, and control power levels. It belongs to the group of single devices, meaning they can either switch or block signals within a single device. Since the STF13NM50N was designed to be a low-thermal-resistance device, its use in a variety of applications is highly beneficial.

Introduction

The STF13NM50N is a metal oxide semiconductor field effect transistor (MOSFET) incorporated by 8.5µm technology that is suitable for operation at very high frequencies. It is manufactured with a maximum gate-to-source voltage rating of -8V and gate-to-drain voltage rating of 21V. It is commonly used in applications that require high switching speed, such as power switches and audio circuits, as well as memory cells. The STF13NM50N has a very low thermal resistance due to its small size, meaning that it dissipates heat efficiently, making it suitable for high-power applications.

Basic Applications

The STF13NM50N is most commonly used as a power switch, as its high current-carrying capacity and fast switching speed allow it to switch power effectively. It is also used as a logic circuit, as its low voltage-drop across the drain-source terminal makes it ideal for the control of digital circuits. Its low-thermal-resistance helps maintain low temperature of the device, even during high power operations, making it suitable for high-power applications. In addition to being useful as a switch and in digital circuits, the STF13NM50N is also suitable as a memory cell due to its fast switching speed and low power consumption. This makes it ideal for applications where memory stability is essential. It is also used in RF power amplifiers and audio applications, as its low-thermal-resistance helps to maintain low oscillation noise.

Advantages

The STF13NM50N has several advantages over its counterparts. Its integrated shield isolate the transistor from high current and voltage, providing better protection from electrical noise. Not only that, but it also has a low drain-source on-resistance, meaning it can handle high currents with greater efficiency. It also has fast switching speed and relatively low power consumption, making it ideal for high-performance applications. Its small size also makes it suitable for applications where space is limited.

Working Principle

The STF13NM50N is based on the principle of the metal-oxide-semiconductor-effect (MOSFET). In this effect, an electric field is created when a voltage is applied across a metal and an oxide, causing a depletion region to form. When an appropriate gate voltage is applied, this field is altered, allowing current to flow and the MOSFET to be switched “on”. The field is then changed once more when the gate voltage is reversed, causing the current to stop and the MOSFET to be switched “off”.The STF13NM50N is a single device, meaning that it can either switch or block signals within a single device. When the STF13NM50N is switched “on”, electrons flow from the source to the drain, causing the charge carriers (heat in the case of STF13NM50N) to be swept away from the area between the source and gate, allowing current to flow and the device to be switched “on”. When the gate voltage is reversed, the electrons are repelled back to the source and the charge carriers are blocked, causing the device to switch “off”.

Conclusion

The STF13NM50N is a metal oxide semiconductor field effect transistor (MOSFET) designed to robustly handle switchings, act as a memory cell, and control power levels. It is incredibly small, low in power consumption and has high current-carrying capacity, making it suitable for a wide variety of applications. This device is based on the principle of the metal-oxide-semiconductor-effect (MOSFET) in which a voltage is applied across a metal and an oxide, creating an electric field that is altered with an appropriate gate voltage. This device is suitable for high-frequency operations and high-power applications where fast switching and low-power consumption is essential, such as electrical and audio circuits.

The specific data is subject to PDF, and the above content is for reference