STF10N95K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	630pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	SuperMESH5™
Rds On (Max) @ Id, Vgs:	800 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	950V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STF10N95K5 application field and working principleAffected by the continuous development of the semiconductor industry, transistors are increasingly used to control, drive, amplify and route electrical signals in various applications, such as communication systems, industrial automation systems, consumer electronics, and automotive electronics. Today, the transistor is no longer a mysterious and cut-off magical block. In actual use, transistors play an important role in various fields. These transistors are mostly upgrade models. STF10N95K5 is one of them.The STF10N95K5 manufactured by STMicroelectronics is a N-channel enhancement mode UltraFET MOSFET transistor. Its structure is a vertical structure with a power semiconductor manufacturer STMicroelectronics and an STF suffix abbreviation. Through the device name recognition, we can know that this transistor has an N-channel design, a number of 9 referring to a maximum continuous drain current of 9A, and a number of 5 referring to a maximum drain-source voltage of 500V. This transistor is extremely fast switching and effectively reduces turn-on losses.The application field of the STF10N95K5 can be divided into two main applications, including power management and control signal switching.For the application of power management, the STF10N95K5 UltraFET MOSFET is characterized by high breakdown voltage, fast switching speed, low on-state resistance and very low gate threshold voltage. This makes it an ideal choice for demanding power management circuits, such as AC/DC converters and DC/DC converters. It provides an effective solution for synchronous rectification and buck/boost, providing greater efficiency and faster response time than linear regulators.When used as a control signal switch, STF10N95K5 can be used in the circuit to connect DC power supply, provide input switching and amplify signal output. It improves the reliability of the circuit and reduces power consumption, providing high-speed switching circuit with low propagation delay. The STF10N95K5 transistor also features low on-state resistance and low gate-source threshold voltage, which ensure fast transitions without sacrificing efficiency.The working principle of the STF10N95K5 includes three processes: gate control, current conduction and current cut-off. When the gate current is insulated from the drain and the miscellaneous signal at the gate terminal is lower than the given value, the current can be conducted in the forward direction between the drain and the source terminals. When the gate current is connected to the drain with an extra signal at the gate signal, the current conduit is cut off, thereby achieving current control.In summary, the STF10N95K5 is a very powerful transistor with two main applications: power management and control signal switching. It is characterized by high breakdown voltage, fast switching speed, low on-state resistance and very low gate threshold voltage, making it an ideal choice for demanding power management circuits. In addition, its low on-state resistance, low gate-source threshold voltage and three-process work principle make it easy to control current. The STF10N95K5 therefore has the potential to profoundly improve the reliability and efficiency of many modern electronic applications.

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