STF18NM60ND

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STF18NM60ND, which is an electrically‐charged device, can be classified as a single N‐channel MOSFET (Metal Oxide Semiconductor Field‐Effect Transistor). It is an enhancement mode device and can be used to control the flow of a current. This device is designed to operate in medium and high power applications, as it is a high voltage MOSFET.

In general, the three primary types of MOSFETs are NMOS, PMOS and Depletion MOSFETs. NMOS is one of the most commonly used type in integrated circuit technology. It is a three terminal device and has an n‐type body which acts as the semiconductor material and forms the channels between source and drain. The gate terminal is insulated from the body by a thin oxide layer. In order for current to flow between the source and drain, a reverse bias voltage must be applied to the gate terminal.

STF18NM60ND is an N‐Channel Enhancement type MOSFET. This means that when a small positive voltage is applied to the gate terminal, the channel is opened and current can flow between source and drain. As the gate voltage is increased, the resistance or impedance decreases and the current flows at a higher rate. When the gate voltage reaches the threshold voltage Vthreshold, the channel is fully opened and current has a steady flow. The maximum drain voltage that can be applied to the device is 600 V. It is only enabled when a negative VGS is applied to the gate terminal.

The applications of the STF18NM60ND MOSFET mainly depend on the features of the device. It can handle switching currents up to 18A and is suitable for a wide range of applications, from motor and lighting controls to DC/DC converters, displays, low voltage power supplies, motor drivers and various power switching applications. It is highly efficient and requires less energy to operate, making it ideal for applications where energy saving is a major concern.

In terms of working principle, the STF18NM60ND MOSFET is based on the principle of voltage control. When the voltage applied to gate terminal reaches the gate cutoff voltage, the current flow between source and drain is completely cut off. The device is then in the off‐state, the power consumption is zero, no heat is produced and the device is stable. When the gate voltage is increased to the gate turn‐on voltage, the device is turned on and the current flows between source and drain. In this condition, the device is in saturation and has a low drain‐source impedance.

Overall, the STF18NM60ND is a high voltage N‐channel enhancement mode MOSFET, which is suitable for medium and high power applications. It is designed to handle switching currents up to 18A and works on the principle of voltage control. STF18NM60ND provides cost benefits and high efficiency, due to its low on‐resistance. It is an ideal choice for various motor control, lighting control, low voltage power supply and power switching applications.

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