| Allicdata Part #: | 497-13753-5-ND |
| Manufacturer Part#: |
STF13N80K5 |
| Price: | $ 2.45 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 800V 12A TO-220FP |
| More Detail: | N-Channel 800V 12A (Tc) 35W (Tc) Through Hole TO-2... |
| DataSheet: | STF13N80K5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.45000 |
| 10 +: | $ 2.37650 |
| 100 +: | $ 2.32750 |
| 1000 +: | $ 2.27850 |
| 10000 +: | $ 2.20500 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | SuperMESH5™ |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STF13N80K5 is a single N-Channel Metal Oxide Semiconductor field effect transistor (MOSFET). The device is designed to provide extremely high breakdown voltage, low on-state resistance and low capacitance.
A MOSFET is a transistor which is constructed using a special semiconductor material known as a metal oxide semiconductor. It is commonly used as a switching device due to its low power consumption, low on-state resistance, and high off-state resistance. The STF13N80K5 is a particular type of MOSFET which utilizes an N-Channel MOSFET structure. This type of transistor is used for switching applications where the current is flowing from the source to the drain. The gate of the transistor can be used to control the current flow between the source and the drain.
The STF13N80K5 is a high-voltage MOSFET with a breakdown voltage of 80V and a max junction temperature of 175°C. It is also rated for a drain-source voltage of 13V and a current rating of 80 amps. It has an on-state resistance of 2.6 ohms and a capacitance between gate-source and gate-drain of 39pF and 20pF respectively. These features make it ideal for a wide range of switching applications.
In most applications, the STF13N80K5 MOSFET is used as either a low-side or a high-side switch. When used as a low-side switch, the gate is connected to ground, the drain is connected to the load, and the source is connected to the power supply. When used as a high-side switch, the gate is connected to the power supply, the drain is connected to the load, and the source is connected to ground. In either case, the transistor acts like an electronic switch which can be used to turn the load on and off by sending a signal to the gate. The voltage and current ratings can be set to ensure that the device is not over-stressed or damaged.
In addition to its use as a switching device, the STF13N80K5 MOSFET can also be used as an amplifier. By varying the voltage applied to the gate, the amount of current that can be passed through the device can be increased or decreased, depending on the particular configuration. This feature makes it useful for performing analog voltage amplification.
The STF13N80K5 MOSFET is a versatile and reliable device that is suitable for a wide variety of switching and amplification applications. It has a high breakdown voltage, low on-state resistance, and low capacitance, making it an ideal choice for many different types of applications. Whether you need a high-side or low-side switch, or an amplifier, the STF13N80K5 MOSFET can provide the reliable performance that you need.
The specific data is subject to PDF, and the above content is for reference
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STF13N80K5 Datasheet/PDF